Photoelectrochemical etching of P-type semiconductor heterostructures
First Claim
Patent Images
1. A method for etching a p-type semiconductor layer in a device structure, comprising:
- photo-electrochemical (PEC) etching the p-type layer of a p-i-n heterostructure using an internal electric field of the device structure and an electrolyte.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.
-
Citations
17 Claims
-
1. A method for etching a p-type semiconductor layer in a device structure, comprising:
photo-electrochemical (PEC) etching the p-type layer of a p-i-n heterostructure using an internal electric field of the device structure and an electrolyte. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
Specification