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Method of forming metal electrode of system in package

  • US 8,053,362 B2
  • Filed: 06/17/2008
  • Issued: 11/08/2011
  • Est. Priority Date: 06/22/2007
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a system-in-package including a multilayer semiconductor device having semiconductor devices stacked in a plurality of layers; and

    thenforming a through hole extending through the plurality of layers; and

    thenforming a combustible material having a high viscosity at a lowermost portion of the through hole; and

    thenforming a through electrode by filling copper in the through hole.

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  • 6 Assignments
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