Method and apparatus for radiation effects detection
First Claim
1. An implantable medical apparatus comprising:
- a solid state electronic circuit;
an accumulated ionizing radiation exposure sensor configured to;
detect an exposure of the solid state electronic circuit to ionizing radiation; and
generate an indication of a non-single-event-upset (non-SEU) effect to the solid state electronic circuit from the exposure to ionizing radiation;
an ionizing radiation dose rate sensor configured to detect an exposure of the solid state circuit to flux ionizing radiation; and
a controller circuit communicatively coupled to the accumulated ionizing radiation exposure sensor and the ionizing radiation dose rate sensor, wherein the controller circuit is configured to adjust the indication from the accumulated ionizing radiation exposure sensor when the radiation dose rate sensor indicates that flux ionizing radiation exceeds a flux ionizing radiation threshold.
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Abstract
An implantable medical apparatus comprises a solid state electronic circuit, an ionizing radiation exposure sensor, an ionizing radiation dose rate sensor, and a controller circuit. The ionizing radiation exposure sensor is configured to detect an exposure of the solid state electronic circuit to ionizing radiation, and generate an indication of a non-single-event-upset (non-SEU) effect to the solid state electronic circuit from the exposure to ionizing radiation, wherein the sensor comprises an accumulated ionizing radiation exposure sensor. The controller circuit is configured to blank the indication from the accumulated ionizing radiation exposure sensor when the radiation dose rate sensor indicates that flux ionizing radiation exceeds a flux ionizing radiation threshold.
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Citations
20 Claims
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1. An implantable medical apparatus comprising:
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a solid state electronic circuit; an accumulated ionizing radiation exposure sensor configured to; detect an exposure of the solid state electronic circuit to ionizing radiation; and generate an indication of a non-single-event-upset (non-SEU) effect to the solid state electronic circuit from the exposure to ionizing radiation; an ionizing radiation dose rate sensor configured to detect an exposure of the solid state circuit to flux ionizing radiation; and a controller circuit communicatively coupled to the accumulated ionizing radiation exposure sensor and the ionizing radiation dose rate sensor, wherein the controller circuit is configured to adjust the indication from the accumulated ionizing radiation exposure sensor when the radiation dose rate sensor indicates that flux ionizing radiation exceeds a flux ionizing radiation threshold. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An implantable medical apparatus comprising:
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a plurality of solid state electronic circuits; a plurality of integrated circuits (ICs), each IC including an ionizing radiation exposure sensor configured to generate an indication of a non-single-event-upset (non-SEU) effect to a solid state electronic circuit, wherein the ICs are fabricated using different IC processes; and a controller circuit communicatively coupled to the ionizing radiation exposure sensors, wherein the controller circuit is configured to quantify the effect to a solid state electronic circuit using the different indications from the different ionizing radiation exposure sensors. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. An implantable medical apparatus comprising:
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a solid state electronic circuit; a ionizing radiation exposure sensor that includes a test amplifier circuit that includes a bipolar junction transistor; a comparison circuit communicatively coupled to the ionizing radiation exposure sensor; and a controller circuit communicatively coupled to the comparison circuit, wherein the controller circuit is configured to; alter operation of the apparatus if the comparison circuit indicates a shift in signal gain of the test amplifier circuit for a specified input signal applied to the amplifier circuit after exposure to ionizing radiation; and quantify the effect to the solid state electronic circuit from the indicated shift in signal gain of the test amplifier circuit. - View Dependent Claims (18, 19, 20)
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Specification