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Light emitting device and fabrication method thereof

  • US 8,053,789 B2
  • Filed: 12/12/2007
  • Issued: 11/08/2011
  • Est. Priority Date: 12/28/2006
  • Status: Active Grant
First Claim
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1. A light emitting diode (LED), comprising:

  • a first semiconductor layer having a plurality of grooves formed therein;

    second semiconductor layer disposed on one surface of the first semiconductor layer, the second semiconductor layer being exposed by the plurality of the grooves of the first semiconductor layer;

    an active layer and a third semiconductor layer, disposed on one surface of the second semiconductor layer;

    a reflective layer and a conductive substrate, disposed on one surface of the third semiconductor layer the reflective layer disposed between the third semiconductor layer and the conductive substrate; and

    a first electrode pad disposed on the other surface of the first semiconductor layer, the first electrode pad being filled in at least a portion of the grooves.

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