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Compliant bonding structures for semiconductor devices

  • US 8,053,905 B2
  • Filed: 10/05/2010
  • Issued: 11/08/2011
  • Est. Priority Date: 03/04/2009
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a light emitting device comprising;

    a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;

    a metal p-contact disposed on the p-type region; and

    a metal n-contact disposed on the n-type region;

    wherein the metal p-contact and the metal n-contact are both formed on a same side of the semiconductor structure;

    a mount; and

    a bonding structure disposed between the light emitting device and the mount, the bonding structure comprising;

    a plurality of metal regions separated by gaps; and

    a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device, wherein the metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount.

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