Photo detector and method for fabricating the same

• US 8,054,304 B2
• Filed: 11/21/2007
• Issued: 11/08/2011
• Est. Priority Date: 07/27/2007
• Status: Active Grant

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Chen, Hsin-Li, Lin, Yu-Min, Gan, Feng-Yuan
• Primary Examiner(s): Mengistu; Amare
• Assistant Examiner(s): Guertin; Aaron M
• Application Number:
  US11/943,602
• Publication Number:
  US 20090027371A1
• Time in Patent Office: 1,448 Days
• Field of Search: 356/3.06, 345/207, 257/462, 257/87, 438/30
• US Class Current: 345/207
• CPC Class Codes: G02F 1/13312 Circuits comprising photodetectors for purposes other than feedback
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G06F 3/0412 Digitisers structurally integrated in a display
• CPC Class Codes: G06F 3/042 by opto-electronic means
• CPC Class Codes: G09G 2300/0408 Integration of the drivers onto the display substrate
• CPC Class Codes: G09G 2360/144 the light being ambient light
• CPC Class Codes: G09G 3/20 for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
• CPC Class Codes: H01L 31/12 structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto semiconductor devices with at least one potential barrier or surface barrier adapted for light emission H01L33/00; amplifiers using electroluminescent element and photocell H03F17/00; electroluminescent light sources per se H05B33/00
• CPC Class Codes: H01L 31/145 the semiconductor device sensitive to radiation being characterised by at least one potential-jump barrier or surface barrier
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer with a first state, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer with a second state, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region of the substrate. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.

Claims

1. A photo detector, comprising:

a substrate having a transistor region and a photosensitive region;

a first patterned semiconductor layer disposed on the transistor region of the substrate, wherein the first patterned semiconductor layer comprises a first doping region and a second doping region;

a dielectric layer covering the first patterned semiconductor layer of the transistor region, the photosensitive region, and the substrate;

a first patterned conductive layer formed on the dielectric layer of the transistor region and on the dielectric layer of the photosensitive region;

an interlayer dielectric layer covering the dielectric layer and the first patterned conductive layer, wherein the interlayer dielectric layer comprises at least two openings to expose a portion of the first doping region of the first patterned semiconductor layer and a portion of the second doping region of the first patterned semiconductor layer;

a second patterned semiconductor layer disposed on the interlayer dielectric layer of the photosensitive region;

two first electrodes formed on the interlayer dielectric layer and electrically connected with the first patterned semiconductor layer via the at least two openings, respectively; and

two second electrodes formed on the portion of the second patterned semiconductor layer.

2. The photo detector of claim 1, further comprising a patterned passivation layer covering the interlayer dielectric layer and the first and the second electrodes.

3. The photo detector of claim 2, further comprising a second patterned conductive layer having a first potion and a second portion formed on the patterned passivation layer of the transistor region and the patterned passivation layer of the photosensitive region, wherein the first portion is electrically connected to one of the first electrodes of the transistor region and the second portion is substantially disposed between the two second electrodes of the photosensitive region.

4. The photo detector of claim 3, wherein the edge of one of the two second electrodes and an edge of the second portion comprise a first distance therebetween and the edge of the other one of the two second electrodes and the other edge of the second portion comprise a second distance therebetween.

5. The photo detector of claim 4, wherein the ratio between the first distance and the second distance is 0 to about 7.5.

6. The photo detector of claim 3, wherein the second portion is electrically connected to a voltage source.

7. The photo detector of claim 3, wherein the second portion is electrically connected to at least one of the patterned conductive layer of the photosensitive region and one of the second electrodes.

8. The photo detector of claim 1, further comprising at least one storage capacitor electrically connected to one of the first electrodes of the transistor region.

9. The photo detector of claim 1, wherein the two second electrodes are formed on the portion of the second patterned semiconductor layer and on the portion of the interlayer dielectric layer.

10. The photo detector of claim 1, wherein the first patterned semiconductor layer and the second patterned semiconductor layer are located at different horizontals, respectively.