Adjustably transmissive MEMS-based devices
First Claim
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1. An electromechanical device, comprising:
- a first film stack disposed upon a substrate, wherein the first thin film stack comprises a first titanium dioxide layer about 40 nm in thickness; and
a second film stack spaced apart from the first film stack by a gap, wherein the second film stack comprises a second titanium dioxide layer about 40 nm in thickness, wherein the second film stack is movable between a first position and a second position so as to alter the transmission of a wide range of visible wavelengths without significantly altering the transmission of infrared light.
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Abstract
Modulator devices are selectably adjustable between at least two states, wherein the transmission and/or reflection of particular wavelengths of light are modified. Certain modulator devices are substantially uniformly adjustable over a wide range of wavelengths, including visible and infrared wavelengths. Other modulator devices are adjustable over visible wavelengths without significantly affecting infrared wavelengths. In addition, the modulator devices may be used in conjunction with fixed thin film reflective structures.
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Citations
24 Claims
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1. An electromechanical device, comprising:
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a first film stack disposed upon a substrate, wherein the first thin film stack comprises a first titanium dioxide layer about 40 nm in thickness; and a second film stack spaced apart from the first film stack by a gap, wherein the second film stack comprises a second titanium dioxide layer about 40 nm in thickness, wherein the second film stack is movable between a first position and a second position so as to alter the transmission of a wide range of visible wavelengths without significantly altering the transmission of infrared light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 19)
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18. An electromechanical device comprising:
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a first film stack disposed upon a substrate, wherein the first film stack comprises a conductive layer and alternating sublayers of silicon oxide and titanium dioxide; and a second film stack spaced apart from the first film stack by an air gap, wherein the second film stack comprises a conductive layer and alternating layers of silicon oxide and titanium dioxide, wherein the silicon dioxide sublayers in the first and second film stacks are about 20 nm in thickness and the titanium dioxide sublayers in the first and second film stacks are about 55 nm in thickness, and wherein the second film stack is movable between a first position and a second position so as to alter the transmission of a wide range of visible and infrared wavelengths; wherein the electromechanical device transmits substantially more visible light and infrared light when in said first position than is transmitted in said second position. - View Dependent Claims (20, 21)
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22. An electromechanical device comprising:
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a first film stack disposed upon a substrate, wherein the first film stack comprises a layer of ITO; a second film stack spaced apart from the first film stack by an air gap, wherein the second film stack is movable between a first position and a second position, and wherein the second film stack comprises a layer of ITO overlying a layer of titanium dioxide; and a plurality of intermediate layers disposed between the first film stack and the second film stack, wherein the plurality of intermediate layers comprises a plurality of titanium dioxide layers; wherein the electromechanical device transmits substantially more visible light and infrared light when in said first position than is transmitted in said second position. - View Dependent Claims (23, 24)
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Specification