Electrostatic discharge structures and methods of manufacture
First Claim
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1. A structure comprising:
- an electrostatic discharge (ESD) network that is electrically connected in series to a through wafer via,wherein the ESD network includes an inductive coil that is positioned under a bond pad and the inductive coil has a resistance of less than about 10 ohms and is structured to carry a current of about 1 amp to about 10 amps.
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Abstract
Electrostatic discharge (ESD) structures having a connection to a through wafer via structure and methods of manufacture are provided. The structure includes an electrostatic discharge (ESD) network electrically connected in series to a through wafer via. More specifically, the ESD circuit includes a bond pad and an ESD network located under the bond pad. The ESD circuit further includes a through wafer via structure electrically connected in series directly to the ESD network, and which is also electrically connected to VSS.
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Citations
16 Claims
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1. A structure comprising:
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an electrostatic discharge (ESD) network that is electrically connected in series to a through wafer via, wherein the ESD network includes an inductive coil that is positioned under a bond pad and the inductive coil has a resistance of less than about 10 ohms and is structured to carry a current of about 1 amp to about 10 amps. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An ESD circuit comprising:
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a bond pad; an ESD network located under the bond pad, the ESD network including an ESD element and an inductive coil; and a through wafer via structure electrically connected in series directly to the ESD network, and which is also electrically connected to VSS, wherein the inductive coil is one of copper and aluminum located under the bond pad and electrically connected in series directly to the through wafer via structure. - View Dependent Claims (10, 11, 12, 14)
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13. An ESD circuit comprising:
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a bond pad; an ESD network located under the bond pad, the ESD network including an ESD element and an inductive coil; and a through wafer via structure electrically connected in series directly to the ESD network, and which is also electrically connected to VSS, wherein the inductive coil is about 2 microns wide to about 8 microns wide and about 0.5 microns thick to about 4 microns thick.
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15. A method of manufacturing an ESD network, comprising:
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forming a bond pad above an interlevel dielectric layer; forming an ESD element having an inductive coil under the bond pad, in the interlevel dielectric layer; and forming a through via structure by lithographic, etching and deposition processes, and which is electrically connected to the inductive coil, wherein the inductive coil is formed by depositing a thin film of conductive material in the interlevel dielectric layer.
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16. A structure comprising:
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an electrostatic discharge (ESD) network that is electrically connected in series to a through wafer via, wherein the ESD network includes; a single diode; and an inductive coil that is positioned under a bond pa, the inductive coil being a low resistance thick film.
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Specification