Method of performing mask-writer tuning and optimization

• US 8,056,028 B2
• Filed: 04/02/2009
• Issued: 11/08/2011
• Est. Priority Date: 04/14/2008
• Status: Expired due to Fees

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Wiley, James Norman, Ye, Jun, Cao, Yu
• Primary Examiner(s): LIN, SUN J
• Application Number:
  US12/417,559
• Publication Number:
  US 20090276751A1
• Time in Patent Office: 950 Days
• Field of Search: 716/50, 716/51, 716/54, 716/55
• US Class Current: 716/55
• CPC Class Codes: G03F 1/44 Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
• CPC Class Codes: G03F 1/68 Preparation processes not covered by groups G03F1/20 - G03F1/50
• CPC Class Codes: G03F 1/76 Patterning of masks by imaging
• CPC Class Codes: G03F 1/78 by charged particle beam [CPB], e.g. electron beam patterning of masks

Abstract

A model-based tuning method for tuning a first mask writer unit utilizing a reference mask writer unit, each of which has tunable parameters for controlling mask writing performance. The method includes the steps of defining a test pattern and a mask writing model; generating the test pattern utilizing the reference mask writer unit and measuring the mask writing results; generating the test pattern utilizing the first mask writer unit and measuring the mask writing results; calibrating the mask writing model utilizing the mask writing results corresponding to the reference mask writer unit, where the calibrated mask writing model has a first set of parameter values; tuning the calibrated mask writing model utilizing the mask writing results corresponding to the first mask writer unit, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first mask writer unit based on a difference between the first set of parameter values and the second set of parameter values.

Claims

1. A method of tuning a first mask writer unit utilizing a reference mask writer unit, said first mask writer unit and said reference mask writer unit each having tunable parameters for controlling mask writing performance, said method comprising steps of:

defining a test pattern and a mask writing model;

generating said test pattern utilizing said reference mask writer unit and measuring mask writing results;

generating said test pattern utilizing said first mask writer unit and measuring mask writing results;

calibrating said mask writing model utilizing said mask writing results corresponding to said reference mask writer unit, said calibrated mask writing model having a first set of parameter values;

tuning said calibrated mask writing model utilizing said mask writing results corresponding to said first mask writer unit, said tuned calibrated mask writing model having a second set of parameter values; and

adjusting said tunable parameters of said first mask writer unit based on a difference between said first set of parameter values and said second set of parameter values.

2. The method of claim 1, wherein said first mask writer unit comprises at least one of an e-beam writer unit and an optical writer unit.

3. The method of claim 1, wherein said mask writing model comprises fixed parameters.

4. The method of claim 1, wherein said tunable parameters of said first mask writer unit correspond to said tunable parameters of said reference mask writer unit.

5. The method of claim 1, wherein said tunable parameters of said first mask writer unit and said reference mask writer unit are set at a nominal value when generating said test pattern.

6. A method of tuning a mask writer unit utilizing a mask writing model, said mask writer unit and said mask writing model each having tunable parameters for controlling mask writing performance, said method comprising steps of:

defining a test pattern;

generating said test pattern utilizing said mask writer unit and measuring mask writing results, said mask writer unit having a first set of parameter values;

tuning said mask writing model utilizing said mask writing results corresponding to said mask writer unit, said tuned mask writing model having a second set of parameter values; and

adjusting said tunable parameters of said mask writer unit based on a difference between said first set of parameter values and said second set of parameter values.

7. The method of claim 6, wherein said mask writer unit comprises at least one of an e-beam writer unit and an optical writer unit.

8. The method of claim 6, wherein said mask writing model further comprises fixed parameters.

9. The method of claim 6, wherein said tunable parameters of said mask writer unit correspond to said tunable parameters of said mask writing model.

10. The method of claim 6, wherein said tunable parameters of said mask writer unit are set at a nominal value when generating said test pattern.