System for transcutaneous monitoring of intracranial pressure

• US 8,057,401 B2
• Filed: 10/06/2006
• Issued: 11/15/2011
• Est. Priority Date: 02/24/2005
• Status: Active Grant

• Current Assignee: Erich Wolf
• Original Assignee: Erich Wolf
• Inventors: Wolf, Erich
• Primary Examiner(s): Hindenburg; Max
• Assistant Examiner(s): TOWA, RENE T
• Application Number:
  US11/544,849
• Publication Number:
  US 20070167867A1
• Time in Patent Office: 1,866 Days
• Field of Search: 600300-301, 600/309, 600433-435, 600/473, 600485-488, 600/561, 600/310, 604/9, 604/164.1, 604/466, 604508-510, 604/528, 604/544, 607/33, 607/60, 737/22
• US Class Current: 600/561
• CPC Class Codes: A61B 2560/0219 of externally powered implanted units
• CPC Class Codes: A61B 2562/0247 Pressure sensors
• CPC Class Codes: A61B 5/0017 transmitting optical signals transmission by light H04B10/00
• CPC Class Codes: A61B 5/0031 Implanted circuitry
• CPC Class Codes: A61B 5/0075 by spectroscopy, i.e. measuring spectra, e.g. Raman spectroscopy, infrared absorption spectroscopy A61B5/0071 takes precedence
• CPC Class Codes: A61B 5/0077 Devices for viewing the surface of the body, e.g. camera, magnifying lens
• CPC Class Codes: A61B 5/0086 using infrared radiation
• CPC Class Codes: A61B 5/031 Intracranial pressure

Abstract

A system for measuring and converting to an observer intelligible form an internal physiological parameter of a medical patient. The invention allows transcutaneous telemetry of the measured information intracranial pressure via a system which includes a patient implanted sensor module and a processing and display module which is external of the patient and optically coupled to the sensor module via an external coupling module. A sensor within the implanted module transduces the measured information and a near infrared (NIR) emitter transmits this telemetry information when interrogated by the complementary external coupling module. Alternately, a set of tuned inductor-crystal circuits versus inductor-crystal comprised in part of a cylindrical crystal oscillator whose resonant frequency is sensed by a dipper circuit arrangement is provided. Power for the sensor module is derived inductively through rectification of a transcutaneously-applied high-frequency alternating electromagnetic field which is generated by a power source within the external coupling module, in concept much like a conventional electrical transformer. A computer within the processing and display module calculates the parameter value from the telemetry signal and represents this data either in numerical, graphical, or analog format.

Claims

1. An implantable biometric sensor comprising:

a subcutaneous case;

an access portal in the case to an internal fluid;

a sensor within the case generating a signal related to a property of the internal fluid;

a conversion circuit within the case transforming the signal into a transmitted near infrared optical form; and

an inductive power coupling providing power to the sensor and the conversion circuit; and

,

the sensor is an oscillated crystal comparator further comprising

an isolated reference crystal exposed to a reference pressure and connected to a reference oscillator;

wherein said reference crystal produces a first frequency signal upon excitement thereof;

a transducer crystal exposed to said internal fluid and connected to a transducer oscillator;

wherein said transducer crystal produces a second frequency signal upon excitement thereof;

a heterodyne amplifier connected to the transducer oscillator and the reference oscillator to generate a frequency difference between the first frequency signal and the second frequency signal to compute said property of said internal fluid.

2. The implantable biometric sensor of claim 1 wherein the isolated reference crystal is contained within a pressure sealed container.

3. The implantable biometric sensor of claim 1 wherein the biometric sensor is a pressure transducer.

4. The implantable biometric sensor of claim 1 wherein the biometric sensor is a temperature sensor.

5. The implantable biometric sensor of claim 1 wherein the biometric sensor is a gas level sensor.

6. The implantable biometric sensor of claim 1 wherein the biometric sensor is a chemical composition sensor.

7. The implantable biometric sensor of claim 1 wherein the biometric sensor is an optical property sensor.

8. The implantable biometric sensor of claim 1 wherein the reference crystal and the transducer crystal are matched.

9. The implantable biometric sensor of claim 1 wherein the reference crystal and the transducer crystal exhibit an offset frequency.

10. The implantable biometric sensor of claim 1 wherein the reference crystal and the transducer crystal are silicon dioxide.

11. The implantable biometric sensor of claim 1 wherein transducer crystal is in contact with the internal fluid.

12. The implantable biometric sensor of claim 1 wherein the transducer crystal further comprises a flux reduction means for preventing eddy currents.

13. The implantable biometric sensor of claim 1 wherein the internal fluid is a cerebral spinal fluid.

14. The implantable biometric sensor of claim 1 wherein the conversion circuit comprises:

a level detector and low pass filter connected to the heterodyne amplifier;

a monostable multivibrator connected to the level detector; and

a near infrared emission element connected to the monostable multivibrator.

15. The implantable biometric sensor of claim 14 wherein the near infrared emission element is a coherent light source.

16. The implantable biometric sensor of claim 14 wherein the near infrared emission element is a light emitting diode.

17. The implantable biometric sensor of claim 14 wherein the reference crystal includes a near infrared transparent window adjacent the near infrared emission element.

18. The implantable biometric sensor of claim 1 wherein the case includes a self sealing reservoir of internal fluid.

19. The implantable biometric sensor of claim 1 wherein the near infrared optical form is in the wavelength range of about 750 nm to about 2500 nm.

20. The implantable biometric sensor of claim 1 wherein the near infrared optical form is in the wavelength range of about 800 nm to about 1000 nm.

21. The implantable biometric sensor of claim 1 wherein the optical form is one of the following wavelengths:

760 nm, 765 nm, 780 nm, 785 nm, 790 nm, 800 nm, 805 nm, 808 nm, 810 nm, 820 nm, 830 nm, 840 nm, 850 nm, 870 nm, 880 nm, 800 nm, 904 nm, 905 nm, 915 nm, 920 nm, 940 nm, 950 nm, 970 nm, 980 nm and 1050 nm.

22. The implantable biometric sensor of claim 1 wherein the near infrared optical form includes a pulse width modulated signal.

23. The implantable biometric sensor of claim 1 wherein the near infrared optical form includes a frequency modulated signal.