Process window signature patterns for lithography process control
First Claim
1. A set of process window signature patterns, comprising:
- a plurality of patterns selected from a representation of a circuit in a device area of a mask, wherein a collective response of the plurality of patterns to a lithography process uniquely identifies any deviation from nominal in process condition parameters of the lithography process.
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Abstract
A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.
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Citations
11 Claims
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1. A set of process window signature patterns, comprising:
a plurality of patterns selected from a representation of a circuit in a device area of a mask, wherein a collective response of the plurality of patterns to a lithography process uniquely identifies any deviation from nominal in process condition parameters of the lithography process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
Specification