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Microelectronic device

  • US 8,058,096 B2
  • Filed: 07/31/2007
  • Issued: 11/15/2011
  • Est. Priority Date: 07/31/2007
  • Status: Active Grant
First Claim
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1. A method of making a thin film transistor, comprising:

  • forming an oxide semiconductor channel;

    patterning said oxide semiconductor channel with a photolithographic process to form a patterned oxide semiconductor channel; and

    exposing said patterned oxide semiconductor channel to an oxygen containing plasma;

    wherein said exposing said patterned oxide semiconductor channel to said oxygen containing plasma is conducted for a time of at least two minutes, at an energy level of at least 900 Watts, at an oxygen containing gas flow rate of at least 30 sccm, and at a pressure of at least 40 mTorr.

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