Semiconductor power conversion apparatus and method of manufacturing the same
First Claim
1. A semiconductor power conversion apparatus comprising:
- a semiconductor device for performing power conversion; and
a bus bar for electrically connecting an electrode of said semiconductor device and a circuit component external to the semiconductor device with each other, whereinsaid bus bar is configured to include a connection section with said electrode and a non-connection section with said electrode that are integrally shaped and to have a thermal stress relief mechanism for relieving thermal stress acting on a connection part formed of a part of said connection section and electrically connected with said electrode without through bonding wire in a state of being opposed to said electrode,said connection part is formed to have a thickness smaller than that of said non-connection section thereby forming said thermal stress relief mechanism,said non-connection section is arranged common to a plurality of said semiconductor devices to extend in a first direction, andsaid connection section is provided corresponding to each said semiconductor device in such a shape that branches from said non-connection section and extends in a second direction crossing said first direction, and said connection section has at least a portion in thickness smaller than said non-connection section.
1 Assignment
0 Petitions
Accused Products
Abstract
A bus bar has a lead portion and a bus bar portion which are integrally shaped. The lead portion is provided in such a shape that branches from the bus bar portion. A part of the lead portion forms a connection part directly electrically connected with a transistor electrode and a diode electrode by a connecting material such as solder. The thickness of the lead portion including the connection part is made smaller than the thickness of the bus bar portion. Accordingly, such an interconnection structure can be provided in which the electrode of the semiconductor device and the bus bar are electrically directly connected with each other and thermal stress at the connection part therebetween can be relieved.
26 Citations
16 Claims
-
1. A semiconductor power conversion apparatus comprising:
-
a semiconductor device for performing power conversion; and a bus bar for electrically connecting an electrode of said semiconductor device and a circuit component external to the semiconductor device with each other, wherein said bus bar is configured to include a connection section with said electrode and a non-connection section with said electrode that are integrally shaped and to have a thermal stress relief mechanism for relieving thermal stress acting on a connection part formed of a part of said connection section and electrically connected with said electrode without through bonding wire in a state of being opposed to said electrode, said connection part is formed to have a thickness smaller than that of said non-connection section thereby forming said thermal stress relief mechanism, said non-connection section is arranged common to a plurality of said semiconductor devices to extend in a first direction, and said connection section is provided corresponding to each said semiconductor device in such a shape that branches from said non-connection section and extends in a second direction crossing said first direction, and said connection section has at least a portion in thickness smaller than said non-connection section. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A method of manufacturing a semiconductor power conversion apparatus comprising:
-
a first process of electrically connecting a bus bar with an electrode of a semiconductor device, said bus bar being configured to include a connection section with said electrode of said semiconductor device and a non-connection section with said electrode that are integrally shaped, said connection section having a thermal stress relief mechanism for relieving thermal stress acting on a connection part with said electrode;
said connection part being electrically connected with said electrode without through bonding wire in a state of being opposed to said electrode; anda second process for forming an insulating protection coat for said connection part of said bus bar with said electrode formed through said first process, wherein said connection part is formed to have a thickness smaller than that of said non-connection section thereby forming said thermal stress relief mechanism, said non-connection section is arranged common to a plurality of said semiconductor devices to extend in a first direction, and said connection section is provided corresponding to each said semiconductor device in such a shape that branches from said non-connection section and extends in a second direction crossing said first direction, and said connection section has at least a portion in thickness smaller than said non-connection section. - View Dependent Claims (13, 14, 15, 16)
-
Specification