Thin film transistor, display device, including the same, and associated methods
First Claim
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1. A thin film transistor (TFT), comprising:
- a substrate;
a gate electrode on the substrate;
an oxide semiconductor layer including a channel region, a source region, and a drain region;
a gate insulating layer between the gate electrode and the oxide semiconductor layer; and
source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively,wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has an indium (In) concentration less than an indium (In) concentration of the lower layer.
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Abstract
A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.
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Citations
6 Claims
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1. A thin film transistor (TFT), comprising:
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a substrate; a gate electrode on the substrate; an oxide semiconductor layer including a channel region, a source region, and a drain region; a gate insulating layer between the gate electrode and the oxide semiconductor layer; and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has an indium (In) concentration less than an indium (In) concentration of the lower layer. - View Dependent Claims (2)
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3. A display device, comprising:
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a first substrate including a thin film transistor; and a second substrate opposite to the first substrate;
wherein the thin film transistor includes;a gate electrode on the first substrate, an oxide semiconductor layer including a channel region, a source region and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions, respectively, and the oxide semiconductor layer includes a GIZO bilayer structure including a lower layer and an upper layer, and the upper layer has an indium (In) concentration less than an indium (In) concentration of the lower layer. - View Dependent Claims (4, 5, 6)
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Specification