Micro-emitter array based full-color micro-display
First Claim
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1. A pixel for use in a multicolor illumination device, said pixel comprising:
- a red emitter;
a green emitter; and
a blue emitter for generating a blue light emission;
said red, green, and blue emitters being substantially vertically stacked one on top of the other onto a substrate, andwherein both of said green and blue emitters are caused to be transparent relative to a red light emission from said red emitter, and said blue emitter is caused to be transparent relative to a green light emission from said green emitter;
wherein said substrate is transparent to all of said red, green, and blue light emissions; and
wherein said pixel structure comprises;
(i) a buffer layer deposited on said substrate;
(ii) a first n-GaN layer deposited above said buffer layer;
(iii) a first InGaN/GaN multi-quantum well (MQW) active region deposited above said first n-GaN layer, said first InGaN/GaN MQW active region being adapted to generate said blue emissions;
(iv) a first p-GaN layer deposited above said first InGaN/GaN MQW active region;
(v) an at least semi-insulative layer deposited above said first p-GaN layer;
(vi) a second p-GaN layer deposited above said at least semi-insulative layer;
(vii) a second InGaN/GaN MQW active region deposited above said second p-GaN layer, said second InGaN/GaN MQW active region adapted generate said green emissions;
(viii) a second n-GaN layer deposited above said second InGaN/GaN MQW active region;
(ix) a third InGaN/GaN MQW active region deposited above said second n-GaN layer, said third InGaN/GaN MQW active region adapted to generate said red emissions; and
(x) a third p-GaN layer deposited above said third InGaN/GaN MQW active region.
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Abstract
Disclosed is a semiconductor micro-emitter array for use in a full-color microdisplay. Each pixel includes three vertically-stacked red, green, and blue micro-emitters which minimizes pixel size. The microdisplay may be exclusively based on Group III-nitride semiconductors, with differing indium concentrations in three respective InGaN/GaN active regions for emitting the three RGB colors. Alternatively the microdisplay may be based on hybrid integration of InGaN based III-nitride semiconductors for blue and green emissions, and AlGaInP based (e.g., Group III-V) semiconductors for red emissions.
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Citations
11 Claims
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1. A pixel for use in a multicolor illumination device, said pixel comprising:
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a red emitter; a green emitter; and a blue emitter for generating a blue light emission; said red, green, and blue emitters being substantially vertically stacked one on top of the other onto a substrate, and wherein both of said green and blue emitters are caused to be transparent relative to a red light emission from said red emitter, and said blue emitter is caused to be transparent relative to a green light emission from said green emitter; wherein said substrate is transparent to all of said red, green, and blue light emissions; and wherein said pixel structure comprises; (i) a buffer layer deposited on said substrate; (ii) a first n-GaN layer deposited above said buffer layer; (iii) a first InGaN/GaN multi-quantum well (MQW) active region deposited above said first n-GaN layer, said first InGaN/GaN MQW active region being adapted to generate said blue emissions; (iv) a first p-GaN layer deposited above said first InGaN/GaN MQW active region; (v) an at least semi-insulative layer deposited above said first p-GaN layer; (vi) a second p-GaN layer deposited above said at least semi-insulative layer; (vii) a second InGaN/GaN MQW active region deposited above said second p-GaN layer, said second InGaN/GaN MQW active region adapted generate said green emissions; (viii) a second n-GaN layer deposited above said second InGaN/GaN MQW active region; (ix) a third InGaN/GaN MQW active region deposited above said second n-GaN layer, said third InGaN/GaN MQW active region adapted to generate said red emissions; and (x) a third p-GaN layer deposited above said third InGaN/GaN MQW active region. - View Dependent Claims (2)
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3. A pixel for use in a multicolor illumination device, said pixel comprising:
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a red emitter; a green emitter; and a blue emitter for generating a blue light emission;
said red, green, and blue emitters being substantially vertically stacked one on top of the other onto a substrate, and wherein both of said green and blue emitters are caused to be transparent relative to a red light emission from said red emitter, and said blue emitter is caused to be transparent relative to a green light emission from said green emitter;wherein said pixel is comprised of a hybrid integration of Group III-nitride semiconductors and Group III-V semiconductors; wherein said green, and blue emitters are comprised of InGaN-based structures and said red emitter is comprised of AlGaInP-based structures; wherein said substrate is transparent to said blue, green, and red emissions, and said pixel has structures comprising; a buffer layer on said substrate; a first n-GaN layer above said buffer layer; a blue emission layer above said first n-GaN layer; a first p-GaN layer above said blue emission layer; a green emission layer above said first p-GaN layer; a second n-GaN layer above said green emission layer; an electrically-isolating layer above said second n-GaN layer, said electrically-isolating layer insulating between said InGaN-based structures and said AlGaInP-based structures; a current-spreading layer above said electrically-isolating layer; a p-AlGaInP layer above said current-spreading layer; a red-emission layer above said p-AlGaInP layer; and an n-AlGaInP layer above said red-emission layer. - View Dependent Claims (4)
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5. A pixel for use in a multicolor illumination device, said pixel comprising:
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a red emitter; a green emitter; and a blue emitter for generating a blue light emission;
said red, green, and blue emitters being substantially vertically stacked one on top of the other onto a substrate, and wherein both of said green and blue emitters are caused to be transparent relative to a red light emission from said red emitter, and said blue emitter is caused to be transparent relative to a green light emission from said green emitter;wherein said pixel is comprised of a hybrid integration of Group III-nitride semiconductors and Group III-V semiconductors; wherein said green, and blue emitters are comprised of InGaN-based structures and said red emitter is comprised of AlGaInP-based structures; the device further comprising; an electrical connection made between a first n-contact associated with said AlGaInP-based structures and a second n-contact, said second n-contact being deposited on an n-GaN layer which is deposited between a green emissive layer and a blue emissive layer; said n-GaN layer, green emissive layer, and blue emissive layer all being included in said InGaN-based structures; said first and second contacts together creating a common-grounded anode; a first cathode associated with and electrically controlling said red emitter; a second cathode associated with and electrically controlling said green emitter; and a third cathode associated with and electrically controlling said blue emitter.
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6. A pixel for use in a multicolor illumination device, said pixel comprising:
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a red emitter; a green emitter; and a blue emitter for generating a blue light emission; said red, green, and blue emitters being substantially vertically stacked one on top of the other onto a substrate, and wherein both of said green and blue emitters are transparent relative to a red light emission from said red emitter, and said blue emitter is transparent relative to a green light emission from said green emitter; wherein said pixel structure comprises; (i) a buffer layer deposited on said substrate; (ii) a first n-GaN layer deposited above said buffer layer; (iii) a first InGaN/GaN multi-quantum well (MQW) active region disposed in electrical contact with said first n-GaN layer, said first InGaN/GaN MQW active region being adapted to generate said blue emissions; (iv) a first p-GaN layer disposed in electrical contact with said first InGaN/GaN MQW active region; (v) an at least semi-insulative layer deposited above said first p-GaN layer; (vi) a second p-GaN layer deposited above said at least semi-insulative layer; (vii) a second InGaN/GaN MQW active region disposed in electrical contact with said second p-GaN layer, said second InGaN/GaN MQW active region adapted generate said green emissions; (viii) a second n-GaN layer disposed in electrical contact with said second InGaN/GaN MQW active region; (ix) a third InGaN/GaN MQW active region disposed in electrical contact with said second n-GaN layer, said third InGaN/GaN MQW active region adapted to generate said red emissions; and (x) a third p-GaN layer disposed in electrical contact with said third InGaN/GaN MQW active region. - View Dependent Claims (7, 8, 9, 10)
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11. A pixel for use in a multicolor illumination device, said pixel comprising:
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a red emitter; a green emitter; and a blue emitter for generating a blue light emission;
said red, green, and blue emitters being substantially vertically stacked one on top of the other onto a substrate, and wherein both of said green and blue emitters are caused to be transparent relative to a red light emission from said red emitter, and said blue emitter is caused to be transparent relative to a green light emission from said green emitter;wherein said pixel is comprised of a hybrid integration of Group III-nitride semiconductors and Group III-V semiconductors; wherein said green, and blue emitters are comprised of InGaN-based structures and said red emitter is comprised of AlGaInP-based structures; wherein said substrate is transparent to said blue, green, and red emissions, and said pixel has structures comprising; a buffer layer on said substrate; a first Group III-Nitride layer above said buffer layer; a blue emission layer disposed adjacent to said first Group-III-Nitride layer; a third Group III-Nitride layer disposed adjacent to said blue emission layer; a green emission layer disposed adjacent to said first Group-III-Nitride layer; a second Group-III-Nitride layer above said green emission layer; an electrically-isolating layer disposed adjacent to said second Group-III-Nitride layer, said electrically-isolating layer insulating between said InGaN-based structures and said AlGaInP-based structures; a current-spreading layer disposed adjacent to said electrically-isolating layer; a first AlGaInP layer disposed adjacent to said current-spreading layer; a red-emission layer disposed adjacent to said AlGaInP layer; and an second AlGaInP layer disposed adjacent to said red-emission layer.
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Specification