Mechanical resonating structures including a temperature compensation structure
First Claim
Patent Images
1. A device comprising:
- a mechanical resonating structure including;
an active layer; and
a compensating structure coupled to the active layer, the compensating structure comprisinga first layer having a stiffness that increases with increasing temperature over at least a first temperature range,a third layer having a stiffness that increases with increasing temperature over at least the first temperature range, anda second layer between the first layer and the third layer,wherein the mechanical resonating structure is configured to support Lamb waves.
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Abstract
Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.
73 Citations
35 Claims
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1. A device comprising:
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a mechanical resonating structure including; an active layer; and a compensating structure coupled to the active layer, the compensating structure comprising a first layer having a stiffness that increases with increasing temperature over at least a first temperature range, a third layer having a stiffness that increases with increasing temperature over at least the first temperature range, and a second layer between the first layer and the third layer, wherein the mechanical resonating structure is configured to support Lamb waves. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A device comprising:
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a mechanical resonating structure including; an active layer; and a compensating structure coupled to the active layer, the compensating structure comprising a first layer having a stiffness that increases with increasing temperature over at least a first temperature range, a third layer having a stiffness that increases with increasing temperature over at least the first temperature range, and a second layer between the first layer and the third layer, wherein the first layer of the compensating structure is formed of a first material and wherein the second layer is formed of a second material different from the first material, and wherein the first material is silicon dioxide and the second material is silicon, and wherein a ratio of a total thickness of one or more layers of the mechanical resonating structure comprising the first material to a total thickness of one or more layers of the mechanical resonating structure comprising the second material is between 1;
0.75 and 1;
2. - View Dependent Claims (23, 24, 25, 26, 27)
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28. A device comprising:
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a mechanical resonating structure including; an active layer; and a compensating structure coupled to the active layer, the compensating structure comprising a first layer having a stiffness that increases with increasing temperature over at least a first temperature range, a third layer having a stiffness that increases with increasing temperature over at least the first temperature range, and a second layer between the first layer and the third layer, wherein the second layer is formed of silicon. - View Dependent Claims (29, 30)
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31. A device comprising:
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a mechanical resonating structure comprising an active layer and a compensation structure coupled to the active layer and configured to compensate temperature-induced variations in stiffness of at least the active layer, the compensation structure comprising a first layer, a second layer, and a third layer, wherein the first and third layers are formed of a first material and wherein the second layer is formed of a second material different than the first material, and wherein the second layer is disposed between the first layer and the third layer, wherein the active layer is formed of aluminum nitride, the first material is formed of silicon dioxide, and the second material is formed of silicon. - View Dependent Claims (32)
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33. A device comprising:
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a mechanical resonating structure comprising an active layer and a compensation structure coupled to the active layer and configured to compensate temperature-induced variations in stiffness of at least the active layer, the compensation structure comprising a first layer, a second layer, and a third layer, wherein the first and third layers are formed of a first material and wherein the second layer is formed of a second material different than the first material, and wherein the second layer is disposed between the first layer and the third layer, wherein the mechanical resonating structure further comprises an electrode layer coupled to the active layer, and wherein the compensation structure is further configured to compensate temperature-induced variations in stiffness of the electrode layer. - View Dependent Claims (34, 35)
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Specification