TMR device with novel free layer structure

• US 8,059,374 B2
• Filed: 01/14/2009
• Issued: 11/15/2011
• Est. Priority Date: 01/14/2009
• Status: Active Grant

• Current Assignee: Headway Technologies Incorporated (TDK Corporation)
• Original Assignee: Headway Technologies Incorporated (TDK Corporation)
• Inventors: Zhang, Kunliang, Li, Min, Wang, Hui-Chuan, Zhao, Tong
• Primary Examiner(s): MAI, SON LUU
• Application Number:
  US12/319,972
• Publication Number:
  US 20100177449A1
• Time in Patent Office: 1,035 Days
• Field of Search: 360/324.2
• US Class Current: 360/324.2
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
• CPC Class Codes: G11B 5/3906 Details related to the use of magnetic thin film layers or to their effects
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1×10⁻⁶, and RA=1.2 ohm-um² when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.

Claims

1. A magnetoresistive element in a magnetic device, comprising:

(a) a stack of layers comprised of a seed layer, anti-ferromagnetic (AFM) layer, and a pinned layer sequentially formed on a substrate;

(b) a tunnel barrier layer with a top surface formed on the pinned layer;

(c) a composite free layer contacting the top surface of the tunnel barrier layer;

said composite free layer is comprised of;

(1) a first ferromagnetic layer comprised of one or more of Co_WFe_(100-W), [Co_WFe_(100-W)]_(100-y)B_Y where w is from 0 to about 100% and y is from 10 atomic % to about 40 atomic %, and an alloy of one of the aforementioned compositions comprised of one or more additional elements including Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, and Nb, said first ferromagnetic layer has a positive magnetostriction and contacts the top surface of the tunnel barrier layer;

(2) an insertion layer formed on the first ferromagnetic layer and including at least one magnetic element selected from Fe, Co, and Ni and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Mg, or Cr; and

(3) a second ferromagnetic layer comprised of one or more of Co_WFe_(100-W) where w is from 0 to about 100 atomic %, Ni_ZFe_(100-Z) where z is from about 70% to 100%, and an alloy wherein CoFe or NiFe are combined with one or more elements selected from Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, and B, said second ferromagnetic layer has a negative magnetostriction and is formed on the insertion layer; and

(d) a capping layer formed on the second ferromagnetic layer in the composite free layer.

2. The magnetoresistive element of claim 1 wherein the first ferromagnetic layer has a thickness from about 2 to 40 Angstroms and is CoFeB, CoFe/CoFeB, or CoFe/CoFeB/CoFe.

3. The magnetoresistive element of claim 1 wherein the insertion layer has a thickness from about 2 to 10 Angstroms and has a CoTa composition wherein the ratio of Co to Ta is from about 1:

1 to 4;

1.

4. The magnetoresistive element of claim 1 wherein the insertion layer has a thickness from about 2 to 10 Angstroms and has a CoFeBTa composition wherein the ratio of CoFeB to Ta is from about 1:

1 to 4;

1.

5. The magnetoresistive element of claim 1 wherein the second ferromagnetic layer has a thickness from about 2 to 50 Angstroms and is CoFe, NiFe, or CoFe/NiFe/CoFe.

6. The magnetoresistive element of claim 1 wherein the tunnel barrier layer is comprised of one or more of MgO, MgZnO, ZnO, Al₂O₃, TiOx, AlTiO, HfOx and ZrOx.

7. A magnetoresistive element in a magnetic device, comprising:

(a) a stack of layers comprised of a seed layer, anti-ferromagnetic (AFM) layer, and a pinned layer sequentially formed on a substrate;

(b) a non-magnetic spacer layer with a top surface formed on the pinned layer;

(c) a composite free layer contacting the top surface of the non-magnetic spacer layer;

said composite free layer is comprised of;

(1) a first ferromagnetic layer comprised of one or more of Co_WFe_(100-W), [Co_WFe_(100-W)]_(100-y)B_Y where w is from 0 to about 100% and y is from 10 atomic % to about 40 atomic %, and an alloy of one of the aforementioned compositions comprised of one or more additional elements including Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, and Nb, said first ferromagnetic layer has a positive magnetostriction and contacts the top surface of the non-magnetic spacer layer;

(2) an insertion layer formed on the first ferromagnetic layer and including at least one magnetic element selected from Fe, Co, and Ni and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Mg, and Cr; and

(3) a second ferromagnetic layer comprised of one or more of Co_WFe_(100-W) where w is from 0 to about 100 atomic %, Ni_ZFe_(100-Z) where z is from 0 to 100%, and an alloy wherein CoFe or NiFe are combined with one or more elements selected from Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, and B, said second ferromagnetic layer has a negative magnetostriction and is formed on the insertion layer; and

(d) a capping layer formed on the second ferromagnetic layer in the composite free layer.

8. The magnetoresistive element of claim 7 wherein the magnetic device is a GMR-CPP sensor or a GMR-CIP sensor.

9. The magnetoresistive element of claim 7 wherein the first ferromagnetic layer has a thickness from about 2 to 40 Angstroms and is CoFeB, CoFe/CoFeB, or CoFe/CoFeB/CoFe.

10. The magnetoresistive element of claim 7 wherein the insertion layer has a thickness from about 2 to 10 Angstroms and has a CoTa composition wherein the ratio of Co to Ta is about 1:

1 to 4;

1.

11. The magnetoresistive element of claim 7 wherein the insertion layer has a thickness from about 2 to 10 Angstroms and has a CoFeBTa composition wherein the ratio of CoFeB to Ta is about 1:

1 to 4;

1.

12. The magnetoresistive element of claim 7 wherein the second ferromagnetic layer has a thickness from about 2 to 50 Angstroms and is CoFe, NiFe, or CoFe/NiFe/CoFe.

13. A method of forming a magnetoresistive element in a TMR sensor, comprising:

(a) sequentially forming a seed layer, AFM layer, and a pinned layer on a substrate;

(b) forming a tunnel barrier layer with a top surface on said pinned layer;

(c) forming a composite free layer on the tunnel barrier layer, said composite free layer is comprised of;

(1) a first ferromagnetic layer comprised of one or more of Co_WFe_(100-W), [Co_WFe_(100-W)]_(100-y)B_Y where w is from 0 to about 100% and y is from 10 atomic % to about 40 atomic %, and an alloy of one of the aforementioned compositions comprised of one or more additional elements including Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, and Nb, said first ferromagnetic layer has a positive magnetostriction and contacts the top surface of the tunnel barrier layer;

(2) an insertion layer formed on the first ferromagnetic layer and including at least one magnetic element selected from Fe, Co, and Ni and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Mg, and Cr; and

(3) a second ferromagnetic layer comprised of one or more of Co_WFe_(100-W) where w is from 0 to about 100 atomic %, Ni_ZFe_(100-Z) where z is from about 70% to 100%, and an alloy wherein CoFe or NiFe are combined with one or more elements selected from Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, and B, said second ferromagnetic layer has a negative magnetostriction and is formed on the insertion layer; and

(d) forming a capping layer on the composite free layer.

14. The method of claim 13 wherein the tunnel barrier layer is comprised of one or more of MgO, MgZnO, ZnO, Al₂O₃, TiOx, AlTiO, HfOx and ZrOx.

15. The method of claim 14 wherein formation of the MgO tunnel barrier layer is comprised of depositing a first Mg layer, performing a natural oxidation process to form a MgO layer, and then depositing a second Mg layer on the MgO layer.

16. The method of claim 15 further comprised of annealing a stack of layers comprised of the tunnel barrier layer and composite free layer.

17. The method of claim 13 wherein the first ferromagnetic layer has a thickness from about 2 to 40 Angstroms and is CoFeB, CoFe/CoFeB, or CoFe/CoFeB/CoFe.

18. The method of claim 13 wherein the insertion layer has a thickness from about 2 to 10 Angstroms and has a CoTa composition wherein the ratio of Co to Ta is from about 1:

1 to 4;

1.

19. The method of claim 13 wherein the insertion layer has a thickness from about 2 to 10 Angstroms and has a CoFeBTa composition wherein the ratio of CoFeB to Ta is from about 1:

1 to 4;

1.

20. The method of claim 13 wherein the second ferromagnetic layer has a thickness from about 2 to 50 Angstroms and is CoFe, NiFe, or CoFe/NiFe/CoFe.