Proximity head heating method and apparatus
First Claim
1. A proximity head for semiconductor wafer processing, comprising:
- a heating portion configured to control a temperature of a liquid flowing therethrough;
a sensor disposed within the proximity head for measuring the temperature of the liquid flowing through the heating portion;
a channel disposed in the heating portion, the channel being configured to guide the liquid through the heating portion; and
a bottom surface having a plurality of outlet ports and a plurality of vacuum inlet ports, the plurality of outlet ports being in fluid communication with the channel disposed in the heating portion, and the plurality of outlet ports and the plurality of vacuum inlet ports opening to a liquid meniscus supported between the bottom surface of the proximity head and a surface of a semiconductor wafer, wherein the plurality of vacuum inlet ports surrounds the plurality of outlet ports.
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Accused Products
Abstract
Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer. An inlet port proximately disposed near the outlet port vacuums the heated fluid to remove the heated fluid from the surface of the semiconductor wafer.
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Citations
12 Claims
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1. A proximity head for semiconductor wafer processing, comprising:
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a heating portion configured to control a temperature of a liquid flowing therethrough; a sensor disposed within the proximity head for measuring the temperature of the liquid flowing through the heating portion; a channel disposed in the heating portion, the channel being configured to guide the liquid through the heating portion; and a bottom surface having a plurality of outlet ports and a plurality of vacuum inlet ports, the plurality of outlet ports being in fluid communication with the channel disposed in the heating portion, and the plurality of outlet ports and the plurality of vacuum inlet ports opening to a liquid meniscus supported between the bottom surface of the proximity head and a surface of a semiconductor wafer, wherein the plurality of vacuum inlet ports surrounds the plurality of outlet ports. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor wafer processing system, comprising:
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a liquid source; a proximity head in fluid communication with the liquid source, the proximity head including; a heating portion configured to control a temperature of a liquid flowing therethrough, a sensor disposed within the proximity head for measuring the temperature of the liquid flowing through the heating portion, a channel disposed in the heating portion, the channel being configured to guide the liquid through the heating portion, and a bottom surface having a plurality of outlet ports and a plurality of vacuum inlet ports, the plurality outlet ports being in fluid communication with the channel disposed in the heating portion, and the plurality of outlet ports and the the plurality of vacuum inlet ports opening to a liquid meniscus supported between the bottom surface of the proximity head and a surface of a semiconductor wafer, wherein the plurality of vacuum inlet ports surrounds the plurality of outlet ports; a first member coupled to the proximity head, the first member being configured to manipulate the proximity head; and a second member configured to support a wafer, the second member being capable of placing the semiconductor wafer proximate to the bottom surface of the proximity head. - View Dependent Claims (9, 10, 11, 12)
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Specification