Proximity head heating method and apparatus

• US 8,062,471 B2
• Filed: 03/31/2004
• Issued: 11/22/2011
• Est. Priority Date: 03/31/2004
• Status: Expired due to Fees

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Mikhaylichenko, Katrina, deLarios, John
• Primary Examiner(s): MACARTHUR, SYLVIA
• Application Number:
  US10/816,487
• Publication Number:
  US 20050221621A1
• Time in Patent Office: 2,792 Days
• Field of Search: 156/345.17, 156/345.18, 156/345.37, 156/345.21, 134/106, 134/135, 134/90, 134/105, 118/401, 118/302
• US Class Current: 156/345.37
• CPC Class Codes: B08B 3/02 Cleaning by the force of jets or sprays
• CPC Class Codes: C25D 17/00 Constructional parts, or assemblies thereof, of cells for electrolytic coating
• CPC Class Codes: C25D 17/001 Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
• CPC Class Codes: C25D 21/02 Heating or cooling
• CPC Class Codes: H01L 21/67023 for general liquid treatment, e.g. etching followed by cleaning
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/6704 for wet cleaning or washing
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67063 for etching
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer. An inlet port proximately disposed near the outlet port vacuums the heated fluid to remove the heated fluid from the surface of the semiconductor wafer.

Claims

1. A proximity head for semiconductor wafer processing, comprising:

a heating portion configured to control a temperature of a liquid flowing therethrough;

a sensor disposed within the proximity head for measuring the temperature of the liquid flowing through the heating portion;

a channel disposed in the heating portion, the channel being configured to guide the liquid through the heating portion; and

a bottom surface having a plurality of outlet ports and a plurality of vacuum inlet ports, the plurality of outlet ports being in fluid communication with the channel disposed in the heating portion, and the plurality of outlet ports and the plurality of vacuum inlet ports opening to a liquid meniscus supported between the bottom surface of the proximity head and a surface of a semiconductor wafer, wherein the plurality of vacuum inlet ports surrounds the plurality of outlet ports.

2. The proximity head of claim 1, wherein the heating portion is comprised of silicon carbide and is coupled to a power source.

3. The proximity head of claim 1, wherein the heating portion is comprised of an insulating material having an electrically conductive material dispersed therein, the electrically conductive material being coupled to a power source.

4. The proximity head of claim 3, wherein the insulating material is comprised of a ceramic material.

5. The proximity head of claim 3, wherein the electrically conductive material comprises a wire.

6. The proximity head of claim 1, wherein the channel in the heating portion is a first channel and the heating portion further includes a second channel, wherein the first channel and the second channel are separated by a material having sufficient thermal conductivity so that heat from a circulating liquid in the second channel can be exchanged with the liquid in the first channel.

7. The proximity head of claim 1, wherein the sensor is coupled to a controller, the controller being configured to control the temperature of the liquid in the heating portion.

8. A semiconductor wafer processing system, comprising:

a liquid source;

a proximity head in fluid communication with the liquid source, the proximity head including;

a heating portion configured to control a temperature of a liquid flowing therethrough,

a sensor disposed within the proximity head for measuring the temperature of the liquid flowing through the heating portion,

a channel disposed in the heating portion, the channel being configured to guide the liquid through the heating portion, and

a bottom surface having a plurality of outlet ports and a plurality of vacuum inlet ports, the plurality outlet ports being in fluid communication with the channel disposed in the heating portion, and the plurality of outlet ports and the the plurality of vacuum inlet ports opening to a liquid meniscus supported between the bottom surface of the proximity head and a surface of a semiconductor wafer, wherein the plurality of vacuum inlet ports surrounds the plurality of outlet ports;

a first member coupled to the proximity head, the first member being configured to manipulate the proximity head; and

a second member configured to support a wafer, the second member being capable of placing the semiconductor wafer proximate to the bottom surface of the proximity head.

9. The semiconductor wafer processing system of claim 8, wherein the heating portion is comprised of silicon carbide and is coupled to a power source.

10. The semiconductor wafer processing system of claim 8, wherein the heating portion is comprised of an insulating material having an electrically conductive material dispersed therein, the electrically conductive material being coupled to a power source.

11. The semiconductor wafer processing system of claim 8, wherein the channel in the heating portion is a first channel and the heating portion further includes a second channel, wherein the first channel and the second channel are separated by a material having sufficient thermal conductivity so that heat from a circulating liquid in the second channel can be exchanged with the liquid in the first channel.

12. The semiconductor wafer processing system of claim 8, wherein the sensor is coupled to a controller, the controller being configured to control the temperature of the liquid in the heating portion.