Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
First Claim
1. A display device, comprising:
- a source electrode and a drain electrode of a thin-film transistor formed on a substrate;
a pixel electrode formed on said substrate and in contact with said source electrode or said drain electrode;
an insulating partition wall layer formed on said substrate and having (a) a first opening extending between said source electrode and said drain electrode and (b) a second opening formed on said pixel electrode and extending to said pixel electrode;
a channel-region semiconductor layer formed on the bottom of said first opening;
an insulating film formed on said insulating partition wall layer so as to cover said first opening and said channel-region semiconductor layer; and
an oriented film covering said first opening from the top of said insulating film and covering said second opening from the top of said pixel electrode.
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Accused Products
Abstract
A display device includes source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode.
14 Citations
11 Claims
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1. A display device, comprising:
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a source electrode and a drain electrode of a thin-film transistor formed on a substrate; a pixel electrode formed on said substrate and in contact with said source electrode or said drain electrode; an insulating partition wall layer formed on said substrate and having (a) a first opening extending between said source electrode and said drain electrode and (b) a second opening formed on said pixel electrode and extending to said pixel electrode; a channel-region semiconductor layer formed on the bottom of said first opening; an insulating film formed on said insulating partition wall layer so as to cover said first opening and said channel-region semiconductor layer; and an oriented film covering said first opening from the top of said insulating film and covering said second opening from the top of said pixel electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification