Semiconductor device having reduced thickness, electronic product employing the same, and methods of fabricating the same
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate having a first circuit region and a second circuit region, the semiconductor substrate including an isolation region to define a first active region and a second active region in the first circuit region and the second circuit region, respectively;
a first transistor in the first active region of the semiconductor substrate, the first transistor including first impurity regions and a first gate pattern;
an insulating pattern on the first transistor and the isolation region of the first circuit region;
a second transistor in the second active region of the second circuit region, the second transistor including second impurity regions and a second gate pattern; and
a first conductive pattern formed on the insulating pattern, wherein at least a part of the first conductive pattern is disposed at a same distance from an upper surface of the semiconductor substrate as at least a part of the second gate pattern,wherein a bottom surface of the second gate pattern is disposed at a lower level than an interface between the first conductive pattern and the insulating pattern.
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Accused Products
Abstract
A semiconductor device capable of reducing a thickness, an electronic product employing the same, and a method of fabricating the same are provided. The method of fabricating a semiconductor device includes preparing a semiconductor substrate having first and second active regions. A first transistor in the first active region includes a first gate pattern and first impurity regions. A second transistor the second active region includes a second gate pattern and second impurity regions. A first conductive pattern is on the first transistor, wherein at least a part of the first conductive pattern is disposed at a same distance from an upper surface of the semiconductor substrate as at least a part of the second gate pattern. The first conductive pattern may be formed on the first transistor while the second transistor is formed.
19 Citations
36 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate having a first circuit region and a second circuit region, the semiconductor substrate including an isolation region to define a first active region and a second active region in the first circuit region and the second circuit region, respectively; a first transistor in the first active region of the semiconductor substrate, the first transistor including first impurity regions and a first gate pattern; an insulating pattern on the first transistor and the isolation region of the first circuit region; a second transistor in the second active region of the second circuit region, the second transistor including second impurity regions and a second gate pattern; and a first conductive pattern formed on the insulating pattern, wherein at least a part of the first conductive pattern is disposed at a same distance from an upper surface of the semiconductor substrate as at least a part of the second gate pattern, wherein a bottom surface of the second gate pattern is disposed at a lower level than an interface between the first conductive pattern and the insulating pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 27, 28, 29, 30, 31, 32, 33)
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14. An electronic product comprising a semiconductor chip, the semiconductor chip comprising:
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a semiconductor substrate having a cell array region and a peripheral circuit region; a cell transistor on the semiconductor substrate of the cell array region, a first gate dielectric layer, the cell transistor including first impurity regions and a first gate pattern; a peripheral transistor on the semiconductor substrate of the peripheral circuit region, the peripheral transistor including second impurity regions, a second gate dielectric layer and a second gate pattern, wherein the second gate pattern includes a first peripheral gate electrode and a second peripheral gate electrode, which are sequentially stacked on the substrate between the second impurity regions; an insulating pattern on the first transistor of the cell array region; a cell conductive pattern on the cell transistor of the cell array region, the cell conductive pattern having at least a part disposed at a same distance from an upper surface of the semiconductor substrate as at least a part of the second peripheral gate electrode; and a cell contact structure formed to pass through the insulating pattern and electrically connected one of the first impurity regions, wherein the cell contact structure is electrically connected to the cell conductive pattern, wherein a bottom surface of the second gate pattern is disposed at a lower level than an interface between the cell conductive pattern and the insulating pattern.
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15. A method of fabricating a semiconductor device, comprising:
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preparing a semiconductor substrate having first and second active regions; forming a first transistor in the first active region, the first transistor including a first gate pattern and first impurity regions; forming a buffer isolation pattern on the first active region; forming a second transistor in the second active region, the second transistor including a second gate pattern and second impurity; and forming a first conductive pattern on the buffer insulating pattern, wherein at least a part of the first conductive pattern is disposed at a same distance from an upper surface of the semiconductor substrate as at least a part of the second gate pattern, wherein a bottom surface of the second gate pattern is disposed at a lower level than an interface between the conductive pattern and the buffer insulating pattern. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method of fabricating a semiconductor device, comprising:
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preparing a semiconductor substrate having first and second regions; forming an insulating pattern on the semiconductor substrate of the first region; forming a conductive pattern on the semiconductor substrate of the second region; forming a conductive layer covering the conductive pattern and the insulating pattern; and patterning the conductive layer and the conductive pattern, forming an interconnection on the insulating pattern, and forming a first gate electrode and a second gate electrode, which are sequentially stacked on the semiconductor substrate of the second region.
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34. A semiconductor device, comprising:
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a semiconductor substrate having a first circuit region and a second circuit region; an insulating pattern on the semiconductor substrate of the first circuit region;
a conductive pattern on the semiconductor substrate of the second circuit region anda transistor in the semiconductor substrate of the second circuit region, the transistor including impurity regions and a gate pattern, wherein the gate pattern includes a first gate electrode and a second gate electrode, which are sequentially stacked, wherein the insulating pattern is disposed at substantially the same level as the first gate electrode, wherein the conductive pattern is disposed at substantially the same level as the second gate electrode. - View Dependent Claims (35, 36)
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Specification