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On-chip temperature gradient minimization using carbon nanotube cooling structures with variable cooling capacity

  • US 8,063,483 B2
  • Filed: 10/18/2007
  • Issued: 11/22/2011
  • Est. Priority Date: 10/18/2007
  • Status: Expired due to Fees
First Claim
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1. A semiconductive device comprising a die wherein the die comprises:

  • (a) at least one defined hot-spot area lying in a plane on the die;

    (b) at least one defined minimum temperature area comprising an area lying in the plane on said die and at a temperature lower than the temperature of said hot-spot area, wherein said minimum temperature area comprises the minimum temperature of said die;

    (c) at least one defined intermediate temperature area comprising an area lying in the plane on said die at a temperature intermediate the temperature of said hot-spot area and said minimum temperature area;

    (d) cooling means comprising at least one bundle of first nanotube means composed of a heat conducting material and extending in a direction outwardly from the plane of said hot-spot area, said first nanotube means being operatively associated with and in heat conducting relationship with said hot-spot area and having heat conductivity sufficient to decrease any temperature gradient between said hot-spot area and any other temperature areas on the die;

    (e) cooling means comprising at least one bundle of additional nanotube means composed of a heat conducting material and extending in a direction outwardly from the plane of said intermediate temperature area, said additional nanotube means being operatively associated with and in heat conducting relationship with said intermediate temperature area and having heat conductivity sufficient to decrease any temperature gradient between said the intermediate temperature area and any other temperature areas on the die;

    (f) the heat conductivity of said bundle of first nanotube means being greater than the heat conductivity of said additional nanotube means;

    (g) said bundle of first nanotube means and said bundle of additional nanotube means being substantially surrounded by a matrix material comprised of a heat conducting material operatively associated with and in heat conducting relation with said minimum temperature area;

    (h) the heat conductivity of said bundle of first nanotube means and said bundle of additional nanotube means being greater than the heat conductivity of said matrix material;

    (i) the distal ends of said bundle of first nanotube means and said bundle of additional nanotube means being positioned for direct contact with a medium comprising a heat exchange medium.

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