Magnetoresistive magnetic field sensor structure

• US 8,063,633 B2
• Filed: 07/10/2008
• Issued: 11/22/2011
• Est. Priority Date: 07/13/2007
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Zimmer, Juergen, Raberg, Wolfgang
• Primary Examiner(s): WHITTINGTON, KENNETH
• Application Number:
  US12/171,185
• Publication Number:
  US 20090015252A1
• Time in Patent Office: 1,230 Days
• Field of Search: 324/207.21, 324/252, 338/32.R, 360/324, 360/324.1, 360/324.11, 360/324.12
• US Class Current: 324/252
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00
• CPC Class Codes: Y10T 29/4902 Electromagnet, transformer or inductor

Abstract

A magnetic field sensor structure including a first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with a first reference magnetization direction and a second magnetoresistive element in a spin-valve arrangement with a second reference layer structure with a second reference magnetization direction, wherein the first and second magnetoresistive elements are arranged in a layer vertically above each other and galvanically isolated from each other by an intermediate layer, and wherein the first and second reference magnetization directions are different.

Claims

1. A magnetic field sensor structure comprising:

a first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with a first reference magnetization direction and with a first ferromagnetic layer structure antiferromagnetically coupled to the first reference layer structure, wherein a first layer thickness ratio DPL,1/DRL,1 of a thickness DPL,1 of the first ferromagnetic layer structure to a thickness DRL,1 of the first reference layer structure is greater than 1, the first magnetoresistive element further comprising a third ferromagnetic layer structure and a first barrier layer structure, wherein the first barrier layer structure is arranged between the third ferromagnetic layer structure and the first reference layer, and wherein the first barrier layer is formed to magnetically decouple or to weakly couple the third ferromagnetic layer structure and the first reference layer structure; and

a second magnetoresistive element in a spin-valve arrangement with a second reference layer structure with a second reference magnetization direction and with a second ferromagnetic layer structure antiferromagnetically coupled to the second reference layer structure, wherein a second layer thickness ratio DPL,2/DRL,2 of a thickness DPL,2 of the second ferromagnetic layer structure to a thickness DRL,2 of the second reference layer structure is smaller than 1, the second magnetoresistive element further comprising a fourth ferromagnetic layer structure and a second barrier layer structure, wherein the second barrier layer structure is arranged between the fourth ferromagnetic layer structure and the second reference layer structure, and wherein the second barrier layer structure is formed to magnetically decouple or to weakly couple the fourth ferromagnetic layer structure and the second reference layer structure,

wherein the first and second magnetoresistive elements are arranged in a layer stack vertically above each other and galvanically isolated from each other by an intermediate layer, and wherein the first and second reference magnetization directions are different.

2. The magnetic field sensor structure as claimed in claim 1, wherein the first and second reference magnetization directions are opposed to each other.

3. The magnetic field sensor structure as claimed in claim 1, wherein the first layer thickness ratio D_PL,1/D_RL,1 is inverse to the second layer thickness ratio D_PL,2/D_RL,2.

4. The magnetic field sensor structure as claimed in claim 1, wherein a layer thickness D_RL,1 of the first reference layer structure deviates by no more than 75% of the layer thickness of the first reference layer structure from a layer thickness D_PL,1 of the first ferromagnetic layer structure.

5. The magnetic field sensor structure as claimed in claim 1, wherein a layer thickness D_RL,2 of the second reference layer structure deviates by no more than 75% of the layer thickness of the second reference layer structure from a layer thickness D_PL,2 of the second ferromagnetic layer structure.

6. The magnetic field sensor structure as claimed in claim 1, wherein the first reference layer structure is a topmost or bottommost ferromagnetic layer structure of a layer structure stack of an odd-numbered layer structures antiferromagnetically coupled to one another, and wherein the second reference layer structure is a topmost or bottommost ferromagnetic layer structure of a layer structure stack of an even-numbered layer structures antiferromagnetically coupled to one another.

7. The magnetic field sensor structure as claimed in claim 1, wherein the first and/or the second magnetoresistive element(s) is/are implemented as a GMR spin-valve element (GMR=giant magnetoresistance).

8. The magnetic field sensor structure as claimed in claim 1, wherein the first and/or the second magnetoresistive element(s) is/are implemented as a TMR spin-valve element (TMR=tunneling magnetoresistance).

9. The magnetic field sensor structure as claimed in claim 1, wherein the first and second reference magnetization directions are anti-parallel, and wherein changes in resistance values of the first and second magnetoresistive elements thus are opposed to each other.

10. The magnetic field sensor structure as claimed in claim 1, further comprising:

a third magnetoresistive element in a spin-valve arrangement with a third reference layer structure with a third reference magnetization direction; and

a fourth magnetoresistive element in a spin-valve arrangement with a fourth reference layer structure with a fourth reference magnetization direction,

wherein the third and fourth magnetoresistive elements are arranged in a layer stack vertically above each other and galvanically isolated from each other by an intermediate layer structure, and wherein the third and fourth reference magnetization directions are opposed to each other; and

wherein the first, second, third and fourth magnetoresistive elements are connected in a bridge circuit such that, due to an inverse change in resistance values of the first and second magnetoresistive elements and of the third and fourth magnetoresistive elements, a difference signal is detectable proportionally to the magnetic field and/or a magnetic field change between two bridge arms of the bridge circuit.

11. The magnetic field sensor structure as claimed in claim 1, wherein the third ferromagnetic layer structure forms a sensor layer of the first magnetoresistive element, and wherein the fourth ferromagnetic layer structure forms the sensor layer of the second magnetoresistive element.

12. The magnetic field sensor structure as claimed in claim 1, wherein the third ferromagnetic layer structure has a large lateral geometrical aspect ratio resulting in a magnetization direction of the third ferromagnetic layer structure which is perpendicular or approximately perpendicular to the reference magnetization direction of the first reference layer structure, and

wherein the fourth ferromagnetic layer structure has a large lateral geometrical aspect ratio resulting in a magnetization direction of the fourth ferromagnetic layer structure which is perpendicular or approximately perpendicular to the reference magnetization direction of the second reference layer structure.

13. A magnetic field sensor structure as claimed in claim 1, wherein the first and second magnetoresistive elements are connected in a Wheatstone measuring bridge circuit such that due to the different reference magnetization directions and associated different changes in resistance values of two first and second magnetoresistive elements when a magnetic field is applied, a difference signal is detectable proportionally to the magnetic field and/or a magnetic field change between two bridge arms of the bridge circuit.

14. The magnetic field sensor structure as claimed in claim 1, wherein the first and second magnetoresistive elements are connected in a Wheatstone measuring bridge circuit such that due to the different reference magnetization directions and associated different changes in resistance values of the first and second magnetoresistive elements when a magnetic field is applied, a difference signal is detectable proportionally to the magnetic field and/or a magnetic field change between two bridge arms of the bridge circuit.

15. A method of producing a magnetic field sensor structure, the method comprising:

arranging a first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with a layer thickness D_RL,1 and a first ferromagnetic layer structure with a layer thickness D_PL,1, wherein the first ferromagnetic layer structure is antiferromagnetically coupled to the first reference layer structure, wherein arranging the first magnetoresistive element comprises forming a third ferromagnetic layer structure above or below the first reference layer structure with a barrier layer structure therebetween, wherein the barrier layer structure is formed to magnetically decouple or to weakly couple the third ferromagnetic layer structure and the first reference layer;

arranging a second magnetoresistive element, vertically above the first magnetoresistive element and galvanically isolated therefrom, in a spin-valve arrangement with a second reference layer structure with a layer thickness D_RL,2 and a second ferromagnetic layer structure with a layer thickness D_PL,2, wherein the second ferromagnetic layer structure is antiferromagnetically coupled to the second reference layer structure, wherein arranging the second magnetoresistive element comprising forming a fourth ferromagnetic layer structure on or below the second reference layer structure with a second barrier layer structure therebetween, wherein the second barrier layer structure is formed to magnetically decouple or to weakly couple the fourth ferromagnetic layer structure and the second reference layer structure;

wherein a first layer thickness ratio of the layer thickness D_PL,1 to the layer thickness D_RL,1 is greater than 1, and a layer thickness ratio of the layer thickness D_PL,2 to the layer thickness D_RL,2 is smaller than 1; and

exposing the first magnetoresistive element and the second magnetoresistive element to a magnetization field with an advantageous magnetization direction during a magnetization write-in process in order to achieve different reference magnetization directions in the first and second reference layer structures due to the different layer thickness ratios.

16. The method as claimed in claim 15, wherein exposing comprises achieving opposed reference magnetization directions in the first and second reference layer structures.

17. The method as claimed in claim 15, further comprising:

adjusting the field strength of the magnetization field to a value of between 5 and 250 mT.

18. The method as claimed in claim 15, wherein the first and second magnetoresistive elements are arranged such that the first layer thickness ratio D_PL,1/D_RL,1 is inverse to the second layer thickness ratio D_PL,2/D_RL,2.

19. The method as claimed in claim 15, wherein the first magnetoresistive element is arranged such that the layer thickness D_RL,1 of the first reference layer structure deviates by no more than 75% of the layer thickness of the first reference layer structure from a layer thickness D_PL,1 of the first ferromagnetic layer structure.

20. The method as claimed in claim 15, wherein the second magnetoresistive element is arranged such that the layer thickness D_RL,2 of the second reference layer structure deviates by no more than 75% of the layer thickness of the second reference layer structure from a layer thickness D_PL,2 of the second ferromagnetic layer structure.

21. The method as claimed in claim 15, wherein the first and/or the second magnetoresistive element(s) is/are implemented as GMR spin-valve elements (GMR=giant magnetoresistance).

22. The method as claimed in claim 15, wherein the first and/or the second magnetoresistive element(s) is/are implemented as TMR spin-valve elements (TMR=tunneling magnetoresistance).

23. The method as claimed in claim 15, wherein the magnetic field sensor structure is manufactured as an integrated component in a CMOS semiconductor processing method.

24. A magnetic field sensor structure comprising:

a first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with a first reference magnetization direction and with a first ferromagnetic layer structure antiferromagnetically coupled to the first reference layer structure, wherein a first layer thickness ratio DPL,1/DRL,1 of a thickness DPL,1 of the first ferromagnetic layer structure to a thickness DRL,1 of the first reference layer structure is greater than 1, the first magnetoresistive element further comprising a third ferromagnetic layer structure; and

a second magnetoresistive element in a spin-valve arrangement with a second reference layer structure with a second reference magnetization direction and with a second ferromagnetic layer structure antiferromagnetically coupled to the second reference layer structure, wherein a second layer thickness ratio DPL,2/DRL,2 of a thickness DPL,2 of the second ferromagnetic layer structure to a thickness DRL,2 of the second reference layer structure is smaller than 1, the second magnetoresistive element further comprising a fourth ferromagnetic layer structure,

wherein the first and second magnetoresistive elements are arranged in a layer stack vertically above each other and galvanically isolated from each other by an intermediate layer, and wherein the first and second reference magnetization directions are different,

wherein the third ferromagnetic layer structure has a large lateral geometrical aspect ratio resulting in a magnetization direction of the third ferromagnetic layer structure which is perpendicular or approximately perpendicular to the reference magnetization direction of the first reference layer structure, and

wherein the fourth ferromagnetic layer structure has a large lateral geometrical aspect ratio resulting in a magnetization direction of the fourth ferromagnetic layer structure which is perpendicular or approximately perpendicular to the reference magnetization direction of the second reference layer structure.

25. The magnetic field sensor structure as claimed in claim 24, wherein the first and second reference magnetization directions are opposed to each other.

26. The magnetic field sensor structure as claimed in claim 24, wherein the first layer thickness ratio D_PL,1/D_RL,1 is inverse to the second layer thickness ratio D_PL,2/D_RL,2.

27. The magnetic field sensor structure as claimed in claim 24, wherein a layer thickness D_RL,1 of the first reference layer structure deviates by no more than 75% of the layer thickness of the first reference layer structure from a layer thickness D_PL,1 of the first ferromagnetic layer structure.

28. The magnetic field sensor structure as claimed in claim 24, wherein a layer thickness D_RL,2 of the second reference layer structure deviates by no more than 75% of the layer thickness of the second reference layer structure from a layer thickness D_PL,2 of the second ferromagnetic layer structure.

29. The magnetic field sensor structure as claimed in claim 24, wherein the first reference layer structure is a topmost or bottommost ferromagnetic layer structure of a layer structure stack of an odd-numbered layer structures antiferromagnetically coupled to one another, and wherein the second reference layer structure is a topmost or bottommost ferromagnetic layer structure of a layer structure stack of an even-numbered layer structures antiferromagnetically coupled to one another.

30. The magnetic field sensor structure as claimed in claim 24, wherein the first and/or the second magnetoresistive element(s) is/are implemented as a GMR spin-valve element (GMR=giant magnetoresistance).

31. The magnetic field sensor structure as claimed in claim 24, wherein the first and/or the second magnetoresistive element(s) is/are implemented as a TMR spin-valve element (TMR=tunneling magnetoresistance).

32. The magnetic field sensor structure as claimed in claim 24, wherein the first and second reference magnetization directions are anti-parallel, and wherein changes in resistance values of the first and second magnetoresistive elements thus are opposed to each other.