Imaging device having a pixel structure with high dynamic range read-out signal

• US 8,063,963 B2
• Filed: 01/06/2005
• Issued: 11/22/2011
• Est. Priority Date: 02/09/1998
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: ON Semiconductor Image Sensor BVBA (Infineon Technologies AG)
• Inventors: Dierickx, Bart
• Primary Examiner(s): Henn; Timothy J
• Assistant Examiner(s): Osinski; Michael
• Application Number:
  US11/030,721
• Publication Number:
  US 20050167602A1
• Time in Patent Office: 2,511 Days
• Field of Search: 348294-324, 250/208.1
• US Class Current: 348/308
• CPC Class Codes: G01J 1/44 Electric circuits for command of an exposure part G03B7/02
• CPC Class Codes: H04N 25/571 involving a non-linear response
• CPC Class Codes: H04N 25/573 the logarithmic type
• CPC Class Codes: H04N 25/575 with a response composed of multiple slopes
• CPC Class Codes: H04N 3/155 Control of the image-sensor operation, e.g. image processing within the image-sensor

Abstract

A method obtains a read-out signal of a pixel having at least a photosensitive element with a charge storage node. The method includes the steps of acquiring charge carriers, converted from impinging radiation on the photosensitive element, on the charge storage node, applying during the integration period at least one reset pulse, resetting incompletely the charge carriers acquired at the moment of applying the reset pulse, to obtain at least one linear response region for the pixel, and driving the pixel in weak inversion after the last incomplete reset pulse of the integration period so as to obtain a logarithmic response part. A corresponding pixel is also described.

Claims

1. A method for obtaining a read-out signal of a pixel having at least one photosensitive element and a charge storage node, the method comprising:

acquiring charge carriers on said charge storage node during an integration period by converting the charge carriers from radiation impinging on the photosensitive element;

during a first time period of said integration period applying at least one reset pulse to a reset transistor with a predetermined amplitude on said charge storage node, said pulse resetting incompletely the charge carriers acquired at the moment of applying said pulse; and

after each of at least one reset pulse further acquiring charge carriers on said charge storage node;

said method further comprising

driving said reset transistor of said pixel in weak inversion during a second time period after the last incomplete reset pulse of said integration period;

further acquiring charge carriers on said charge storage node during said second time period.

2. The method according to claim 1, wherein a plurality of reset pulses is applied on the charge storage node during the first time period.

3. The method according to claim 2, wherein at least two of said plurality of reset pulses have different amplitudes.

4. The method according to claim 1, further comprising applying a reference signal on said charge storage node whereon said at least one reset pulse is superimposed.

5. The method according to claim 1, wherein said at least one reset pulse is delivered by a reset transistor, said reset transistor being in series with said photosensitive element.

6. The method according to claim 1, wherein the read-out signal is a function of a combination of charges acquired prior and after application of said reset pulses.

7. The method according to claim 1, wherein said pixel is implemented in a MOS technology.