Method of iterative compensation for non-linear effects in three-dimensional exposure of resist

• US 8,067,134 B2
• Filed: 10/22/2009
• Issued: 11/29/2011
• Est. Priority Date: 10/22/2008
• Status: Active Grant

• Current Assignee: Micronic Laser Systems AB (Mycronic AB)
• Original Assignee: Micronic Mydata AB (Mycronic AB)
• Inventors: Svensson, Anders, Ekberg, Mats, Wahlsten, Mikael, Sandström, Torbjörn
• Primary Examiner(s): YOUNG, CHRISTOPHER G
• Application Number:
  US12/604,317
• Publication Number:
  US 20100099035A1
• Time in Patent Office: 768 Days
• Field of Search: 430/30, 430/292, 430/311, 430/945
• US Class Current: 430/30
• CPC Class Codes: G03F 7/2022 Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
• CPC Class Codes: G03F 7/70383 Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams maskless lithography using a programmable mask G03F7/70291
• CPC Class Codes: G03F 7/70416 2.5D lithography
• CPC Class Codes: Y10S 430/146 Laser beam

Abstract

The field of this disclosure is making three-dimensional topographic structures by means of graduated exposure in a photosensitive material, such as a photoresist, photosensitive polymide, or similar. Such patterns may be written either to be used directly as optical, mechanical, fluidic, etc. components, e.g. diffusors, non-reflecting surfaces, Fresnel lenses and Fresnel prisms, computer-generated holograms, lenslet arrays, etc, or to be used as masters for the fabrication of such components by replication. Replication can be done by molding, pressing, embossing, electroplating, etching, as known in the art. This disclosure includes descriptions of using passive absorbing components in thin resist, using high gamma thick resists with high resolution pattern generators, using multiple focal planes including at least one focal plane in the bottom half of the resist, and iterative simulation of patterning and adjustment of an exposure map.

Claims

1. A method of forming a three-dimensional latent image with good depth and shape control in a layer of resist applied over a workpiece surface, the method including:

converting a relief map that represents a three-dimensional surface into point-by-point exposure doses calculated to exceed an exposure threshold of the resist at a plurality of controlled depths within the resist layer, producing an exposure map, further including automatically selecting positions of one or more focal planes based on data in the relief map; and

repeating for two or more iterations,

simulating the patterning of the resist layer with a pattern generator that varies effective exposure doses on a point-by-point basis using the exposure map to produce a simulated three-dimensional latent image,

comparing the simulated three-dimensional latent image to the relief map, and

automatically revising the exposure map using results of the comparing.

2. The method of claim 1, wherein the method further includes repeating for five or more iterations.

3. The method of claim 1, wherein the converting further includes calculating a sweep adjustment that takes into account a direction of travel of exposing radiation across the resist layer and compensating for non-linear effects related to whether exposure is building or diminishing as the exposing radiation moves across the resist layer, and incorporating the calculated sweep adjustment into the exposure map.

4. The method of claim 2, wherein the simulating takes into account a direction of travel of exposing radiation across the resist layer and non-linear effects related to whether exposure is building or diminishing as the exposing radiation moves across the resist layer.

5. The method of claim 1, wherein the resist is a positive resist that includes a bleachable absorption component that is converted by the exposing radiation and substantially loses it absorptiveness during the patterning, whereby the bleachable components cause a linear relationship between exposure energy (E) and the depth of exposure (D).

6. The method of claim 1, wherein the resist is a positive resist that includes an effective quantity of passive absorption component that absorbs photons without chemically exposing the positive resist, whereby the passive absorption component causes a log-linear relationship between exposure energy (E) and the depth of exposure (D).

7. The method of claim 1, wherein the layer is a thick layer of resist, further including:

defining multiple focal planes at which to focus exposing energy;

converting the relief map into point-by-point and layer-by-layer exposure doses, the exposure doses allocated by layer, producing the exposure map; and

simulating the patterning of the resist layer using the multiple focal planes.

8. The method of claim 7, further including automatically selecting a number of focal planes based on detection of vertical corners in the relief map.

9. The method of claim 8, further including automatically selecting positions of two or more focal planes based on data in the relief map.

10. The method of claim 8, wherein the thick resist layer has a vertical thickness that is greater than or equal to 1.5 times a depth of focus of the pattern generator during the patterning, wherein the depth of focus is twice a Rayleigh range.

11. The method of claim 8, wherein the thick resist layer has a vertical thickness that is greater than or equal to two times a depth of focus of the pattern generator during the patterning, wherein the depth of focus is a twice Rayleigh range.

12. The method of claim 1, wherein the resist is a positive resist that has a gamma of 5 or greater.

13. The method of claim 7, wherein the simulating takes into account a numerical aperture of the pattern generator when writing to the multiple focal planes.

14. The method of claim 1, wherein the pattern generator is a high dynamic range pattern generator that is calibrated to produce at least 1000 dose steps between minimum and maximum exposure doses.

15. The method of claim 1, wherein the pattern generator is a high dynamic range pattern generator that is configured to write at least 4000 dose steps between minimum and maximum exposure dose.

16. The method of claim 1, wherein the pattern generator is a high dynamic range pattern generator that represents the relief map to a precision of at least 11 binary bits and uses the 11-bit precision to produce exposure doses.

17. The method of claim 1, further including patterning the resist layer to form a three-dimensional latent image using a pattern generator that varies effective exposure doses on a point-by-point basis using the exposure map.

18. The method of claim 17, wherein the pattern generator is a laser pattern generator.

19. The method of claim 1, further including repeating the simulating, comparing and revising actions until the comparing results in a difference between successive simulated three-dimensional latent images that satisfies a pre-determined criterion.

20. The method of claim 1, wherein the converting further takes into account and compensates for non-linear effects related to feature precision requirements, feature area and/or the gradient field.

21. The method of claim 1, wherein the converting further takes into account and compensates for etch rate or dissolution rate selected.

22. The method of claim 1, wherein the converting further takes into account and compensates for the etch rate or dissolution rate selected.

23. The method of claim 1, wherein the converting further uses pre-determined rules and/or a model to compensate for non-linear effects.