Method for functionalizing biosensor chips

• US 8,067,249 B2
• Filed: 03/18/2005
• Issued: 11/29/2011
• Est. Priority Date: 04/21/2004
• Status: Expired due to Fees

• Current Assignee: Boehringer Ingelheim Vetmedica GmbH (C.H. Boehringer Sohn AG & Co. KG)
• Original Assignee: Siemens AG
• Inventors: Frey, Alexander, Hofmann, Franz, Schindler-Bauer, Petra
• Primary Examiner(s): Dickey; Thomas L
• Assistant Examiner(s): YUSHIN, NIKOLAY K
• Application Number:
  US11/587,058
• Publication Number:
  US 20080199974A1
• Time in Patent Office: 2,447 Days
• Field of Search: 438/1, 438/462, 435/6, 536/23.2, 536/24.3, 204/403.1, 204/403.12, 204/403.14
• US Class Current: 438/1
• CPC Class Codes: G01N 27/3277 being a redox reaction, e.g. detection by cyclic voltammetry voltammetry per se G01N27/42, G01N27/48
• CPC Class Codes: G01N 33/54366 Apparatus specially adapted for solid-phase testing

Abstract

A method is disclosed for functionalizing biosensors. The biosensors are based on semiconductor chips mounted on a finished processed wafer. They are provided with sensor fields placed thereupon, which are arranged in any array, and, to be precise, for carrying out a functionalization, for example, with organic molecules such as nucleic acids like DNA, RNA and PNA or with their derivatives, proteins, sugar molecules, or antibodies.

Claims

1. A method for functionalizing a biosensor, comprising:

providing a substrate, including at least one sensor field arranged thereon;

applying a photoresist layer over an entire surface of the substrate and then photolithographically patterning the photoresist layer using a photomask with a set pattern, so that a patterned layer is formed, to form a corresponding cavity above the sensor filed;

applying capture molecules to the sensor field, so that the capture molecules are immobilized within the cavity above the sensor filed, wherein prior to the application of capture molecules, a carrier layer based on hydrogel is applied to the sensor field, wherein the application of capture molecules the sensor field is carried out simultaneously with the application of a carrier layer based on hydrogel to the sensor field, and wherein the application of capture molecules is followed by application of an encapsulation layer based on hydrogel; and

mounting a wafer, functionalized in such a manner following the application of capture molecules in upside-down mode to a sawing sheet, tensioned in a sawing frame, and sawing individual chips out of the wafer.

2. The method as claimed in claim 1, wherein the sensor filed is set up as an integrated electrode field made from at least on of gold, platinum and palladium.

3. The method as claimed in claim 1, wherein the carrier layer is based on poly(meth)acrylamide gel.

4. The method as claimed in claim 1, wherein sensor field is set up as an integrated electrode field.

5. The method as claimed in claim 4, wherein the photoresist layer is applied in a thickness in the range from 10 to 300 μ

m.

6. The method as claimed in claim 1, wherein the photoresist layer is applied in a thickness in the range from 10 to 300 μ

m.

7. The method as claimed in claim 6, wherein the photoresist layer is a negative UV photoresist of an epoxy type.

8. The method as claimed in claim 1, wherein the substrate provided is a fully processed wafer having at least one semiconductor chip, the at least one sensor field being arranged on the semiconductor chip.

9. The method as claimed in claim 8, wherein an electrical recording circuit is integrated in the semiconductor chip.

10. The method as claimed in claim 9, wherein the sensor filed is set up as an integrated electrode field.

11. The method as claimed in claim 9, wherein the sensor filed is set up as an integrated electrode field made from at least on of gold, platinum and palladium.

12. The method as claimed in claim 9, wherein the photoresist layer is applied in a thickness in the range from 10 to 300 μ

m.

13. The method as claimed in claim 8, wherein the semiconductor chip is a CMOS chip.

14. The method as claimed in claim 9, wherein the semiconductor chip is a CMOS chip.

15. The method as claimed in claim 8, wherein the sensor field is set up as an integrated electrode field.

16. The method as claimed in claim 8, wherein the sensor filed is set up as an integrated electrode field made from at least on of gold, platinum and palladium.

17. The method as claimed in claim 8, wherein the photoresist layer is applied in a thickness in the range from 10 to 300 μ

m.

18. The method as claimed in claim 8, wherein the carrier layer is based on poly(meth)acrylamide gel.

19. The method as claimed in claim 13, wherein the sensor filed is set up as an integrated electrode field.

20. The method as claimed in claim 13, wherein the sensor filed is set up as an integrated electrode field made from at least on of gold, platinum and palladium.

21. The method as claimed in claim 4, wherein the photoresist layer is applied in a thickness in the range from 10 to 300 μ

m.