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Methods of forming recessed access devices associated with semiconductor constructions

  • US 8,067,286 B2
  • Filed: 01/24/2011
  • Issued: 11/29/2011
  • Est. Priority Date: 03/25/2005
  • Status: Active Grant
First Claim
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1. A method of forming recessed access devices, comprising:

  • forming recessed access device channels extending into a semiconductor substrate;

    filling the recessed access device channels with a first electrically insulative material;

    patterning the first electrically insulative material into a mask defining a plurality of access device regions, the access device regions being islands surrounded by an isolation region;

    the access device regions comprising only portions of the recessed access device channels;

    etching into the substrate of said isolation region to form a trench within the isolation region;

    after forming the trench, covering the substrate with an electrically insulative laminate comprising silicon dioxide over silicon nitride;

    the laminate filling the isolation region trench;

    removing the first electrically insulative material to reopen the recessed access device channels while leaving the electrically insulative laminate within the isolation region trench; and

    forming gate material within the re-opened recessed access device channels.

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