Method for manufacturing memory element

• US 8,067,316 B2
• Filed: 06/16/2009
• Issued: 11/29/2011
• Est. Priority Date: 06/20/2008
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nagata, Takaaki
• Primary Examiner(s): Lee; Cheung
• Application Number:
  US12/485,652
• Publication Number:
  US 20090317968A1
• Time in Patent Office: 896 Days
• Field of Search: 438/768, 257/E21.007, 257/E21.297, 257/E21.299, 257/E21.477, 257/E21.613
• US Class Current: 438/781
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H10B 63/00 Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Abstract

A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 μm and less than or equal to 10 μm, a resin, and a solvent is placed over a first conductor and the solvent is vaporized. In this manner, a second conductor having the conductive particles and a memory layer including the resin between the first conductor and the conductive particles is formed.

Claims

1. A method for manufacturing a memory element, comprising the steps of:

forming a first conductor;

forming a semiconductor layer over the first conductor;

placing a conductive paste over the semiconductor layer, the conductive paste comprising conductive particles, a resin, and a solvent; and

vaporizing the solvent to form a second conductor, the second conductor comprising the conductive particles and a memory layer including the resin between the first conductor and the conductive particles.

2. The method for manufacturing a memory element according to claim 1,

wherein the conductive paste is placed by a droplet discharge method or a printing method.

3. The method for manufacturing a memory element according to claim 1,

wherein the solvent is vaporized at a temperature higher than or equal to 10°

C. and less than or equal to 280°

C.

4. The method for manufacturing a memory element according to claim 1,

wherein the conductive particles are silver particles.

5. The method for manufacturing a memory element according to claim 1,

wherein the resin is a phenol resin, an epoxy resin, a polyester resin, a silicone resin, an urea resin, an acrylic resin or a cellulose resin.

6. The method for manufacturing a memory element according to claim 1, wherein the semiconductor layer is an inorganic semiconductor layer.

7. The method for manufacturing a memory element according to claim 1, wherein each of the conductive particles has a size of greater than or equal to 0.1 μ

m and less than or equal to 10 μ

m.

8. The method for manufacturing a memory element according to claim 1, wherein a proportion of the conductive particles in the conductive paste is from 80 wt % to 95 wt %.

9. A method for manufacturing a memory element, comprising the steps of:

forming a first conductor;

forming a semiconductor layer over the first conductor;

placing a conductive paste so as to be in contact with a portion of the semiconductor layer, the conductive paste comprising conductive particles, a resin, and a solvent; and

vaporizing the solvent to form a second conductor so as to overlap with the portion of the first conductor, the second conductor comprising the conductive particles and a memory layer including the resin between the first conductor and the conductive particles.

10. The method for manufacturing a memory element according to claim 9,

wherein the conductive paste is placed by a droplet discharge method or a printing method.

11. The method for manufacturing a memory element according to claim 9,

wherein the solvent is vaporized at a temperature higher than or equal to 10°

C. and less than or equal to 280°

C.

12. The method for manufacturing a memory element according to claim 9,

wherein the conductive particles are silver particles.

13. The method for manufacturing a memory element according to claim 9,

wherein the resin is a phenol resin, an epoxy resin, a polyester resin, a silicone resin, an urea resin, an acrylic resin or a cellulose resin.

14. The method for manufacturing a memory element according to claim 9, wherein each of the conductive particles has a size of greater than or equal to 0.1 μ

m and less than or equal to 10 μ

m.

15. The method for manufacturing a memory element according to claim 9, wherein a proportion of the conductive particles in the conductive paste is from 80 wt % to 95 wt %.