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Thin film transistor with two gate electrodes

  • US 8,067,775 B2
  • Filed: 10/20/2009
  • Issued: 11/29/2011
  • Est. Priority Date: 10/24/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a pixel portion; and

    a driver circuit,wherein the pixel portion includes at least a first thin film transistor including a first oxide semiconductor layer,wherein the driver circuit includes at least a second thin film transistor including a second oxide semiconductor layer and a third thin film transistor including a third oxide semiconductor layer,wherein the third thin film transistor includes a first gate electrode below the third oxide semiconductor layer and a second gate electrode above the third oxide semiconductor layer,wherein the third oxide semiconductor layer includes a first region and a second region,wherein the second region overlaps with a source or a drain electrode of the third thin film transistor,wherein a thickness of the first region is smaller than a thickness of the second region, andwherein the second thin film transistor is one of an enhancement type transistor and a depletion type transistor and the third thin film transistor is the other of the enhancement type transistor and the depletion type transistor.

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