Thin film transistor with two gate electrodes
First Claim
1. A semiconductor device comprising:
- a pixel portion; and
a driver circuit,wherein the pixel portion includes at least a first thin film transistor including a first oxide semiconductor layer,wherein the driver circuit includes at least a second thin film transistor including a second oxide semiconductor layer and a third thin film transistor including a third oxide semiconductor layer,wherein the third thin film transistor includes a first gate electrode below the third oxide semiconductor layer and a second gate electrode above the third oxide semiconductor layer,wherein the third oxide semiconductor layer includes a first region and a second region,wherein the second region overlaps with a source or a drain electrode of the third thin film transistor,wherein a thickness of the first region is smaller than a thickness of the second region, andwherein the second thin film transistor is one of an enhancement type transistor and a depletion type transistor and the third thin film transistor is the other of the enhancement type transistor and the depletion type transistor.
1 Assignment
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Accused Products
Abstract
As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.
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Citations
45 Claims
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1. A semiconductor device comprising:
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a pixel portion; and a driver circuit, wherein the pixel portion includes at least a first thin film transistor including a first oxide semiconductor layer, wherein the driver circuit includes at least a second thin film transistor including a second oxide semiconductor layer and a third thin film transistor including a third oxide semiconductor layer, wherein the third thin film transistor includes a first gate electrode below the third oxide semiconductor layer and a second gate electrode above the third oxide semiconductor layer, wherein the third oxide semiconductor layer includes a first region and a second region, wherein the second region overlaps with a source or a drain electrode of the third thin film transistor, wherein a thickness of the first region is smaller than a thickness of the second region, and wherein the second thin film transistor is one of an enhancement type transistor and a depletion type transistor and the third thin film transistor is the other of the enhancement type transistor and the depletion type transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first thin film transistor including a first oxide semiconductor layer; and a second thin film transistor including a second oxide semiconductor layer, wherein the first thin film transistor includes a first gate electrode, the first gate electrode and the first oxide semiconductor layer overlap with each other, wherein the second thin film transistor includes a second gate electrode and a third gate electrode, the second gate electrode and the third gate electrode overlap with each other with the second oxide semiconductor layer interposed therebetween, wherein one of a source and a drain electrode of the first thin film transistor is electrically connected to one of a source and a drain electrode of the second thin film transistor, wherein one of the first gate electrode and the second gate electrode is electrically connected to the one of the source and the drain electrode of the first thin film transistor, and wherein the first thin film transistor is one of an enhancement type transistor and a depletion type transistor and the second thin film transistor is the other of the enhancement type transistor and the depletion type transistor. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a first thin film transistor including a first oxide semiconductor layer; and a second thin film transistor including a second oxide semiconductor layer, wherein the first thin film transistor includes a first gate electrode below the first oxide semiconductor layer, wherein the second thin film transistor includes a second gate electrode below the second oxide semiconductor layer and a third gate electrode above the second oxide semiconductor layer, wherein one of a source and a drain electrode of the first thin film transistor is electrically connected to one of a source and a drain electrode of the second thin film transistor, wherein one of the first gate electrode and the second gate electrode is electrically connected to the one of the source and the drain electrode of the first thin film transistor, and wherein the first thin film transistor is one of an enhancement type transistor and a depletion type transistor and the second thin film transistor is the other of the enhancement type transistor and the depletion type transistor. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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26. A semiconductor device comprising:
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an inverter circuit comprising; a first thin film transistor; and a second thin film transistor, wherein each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor layer and a first gate electrode, the oxide semiconductor layer and the first gate electrode overlap with each other, wherein only one of the first thin film transistor and the second thin film transistor further includes a second gate electrode, wherein the oxide semiconductor layer of the only one of the first thin film transistor and the second thin film transistor is interposed between the first gate electrode of the only one of the first thin film transistor and the second thin film transistor and the second gate electrode, wherein one of a source and a drain electrode of the first thin film transistor is electrically connected to one of a source and a drain electrode of the second thin film transistor, and wherein the first gate electrode of the first thin film transistor is electrically connected to the one of the source and the drain electrode of the first thin film transistor. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A semiconductor device comprising:
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an inverter circuit comprising; a first thin film transistor; and a second thin film transistor, wherein each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor layer and a first gate electrode, the first gate electrode is provided below the oxide semiconductor layer, wherein only one of the first thin film transistor and the second thin film transistor further includes a second gate electrode over the oxide semiconductor layer of the only one of the first thin film transistor and the second thin film transistor, wherein one of a source and a drain electrode of the first thin film transistor is electrically connected to one of a source and a drain electrode of the second thin film transistor, and wherein the first gate electrode of the first thin film transistor is electrically connected to the one of the source and the drain electrode of the first thin film transistor. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45)
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Specification