Semiconductor component with cell structure and method for producing the same

• US 8,067,796 B2
• Filed: 02/18/2008
• Issued: 11/29/2011
• Est. Priority Date: 02/20/2007
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Hirler, Franz, Rieger, Walter, Haeberlen, Oliver
• Primary Examiner(s): Nguyen; Cuong Q
• Assistant Examiner(s): Gebreyesus; Yosef
• Application Number:
  US12/032,725
• Publication Number:
  US 20080197442A1
• Time in Patent Office: 1,380 Days
• Field of Search: 257/327, 257/328, 257/E29.122, 257/E21.41, 257/E21.629, 257/E29.118, 257/E29.274, 257/E29.313, 257/E29.318, 257/E29.262, 257/E29.13, 257/329, 257/330, 257/331, 257/332, 257/E21.643, 438/268, 438/273, 438/274, 438/284, 438/286, 438/212
• US Class Current: 257/328
• CPC Class Codes: H01L 23/4824 Pads with extended contours, e.g. grid structure, branch structure, finger structure
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/42372 characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out H01L29/42324 takes precedence
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor component comprises a semiconductor body comprising a first component electrode arranged on one of the surfaces of the semiconductor body, a second component electrode arranged on one of the surfaces of the semiconductor body, and a component control electrode arranged on one of the surfaces of the semiconductor body. In this case, active semiconductor element cells are arranged in a first active cell array of the semiconductor body, the semiconductor element cells comprising a first cell electrode, a second cell electrode and a cell control electrode and also a drift path between the cell electrodes. At least the component control electrode is arranged on a partial region of the semiconductor body and a second active cell array is additionally situated in the partial region of the semiconductor body below the component control electrode.

Claims

1. A semiconductor component having a semiconductor body comprising:

a first component electrode arranged on the semiconductor body;

a second component electrode arranged on the semiconductor body;

a component control electrode arranged on the semiconductor body;

first and second active semiconductor element cells each including;

a first cell electrode;

a second cell electrode;

a cell control electrode;

a drift path between the cell electrodes;

a first active cell array and a second active cell array of the semiconductor body; and

a partial region of the semiconductor body on which at least the component control electrode is arranged,

wherein the first active semiconductor element cell is arranged in the first active cell array, and the second active cell array is arranged in the partial region of the semiconductor body below the component control electrode.

2. The semiconductor component of claim 1, wherein the second active cell array in the partial region interacts with the first active cell array via an additional electrically conductive intermediate metallization structure or striplines, comprising one of the group polysilicon, amorphous silicon or metal.

3. The semiconductor component of claim 2, wherein the second active cell array in the partial region is electrically insulated from the component control electrode arranged in the partial region by additional insulation layers.

4. The semiconductor component of claim 3, wherein the additional insulation layer has through contacts which electrically connect the cell control electrode of the second active cell array of the partial region to the component control electrode in the partial region below the component control electrode.

5. The semiconductor component of claim 2, wherein the intermediate metallization structure has interconnects which electrically connect cell electrodes of the second active cell arrays in the partial region to cell electrodes of the first cell array.

6. The semiconductor component of claim 2, wherein the first or second cell electrodes of the first cell array are electrically connected to the first or the second component electrode via through contacts through a central insulation layer.

7. The semiconductor component of claim 1, wherein the cell control electrodes of the first cell array are electrically connected to the component control electrode on the partial region of the semiconductor body via interconnects or a ring line.

8. The semiconductor component of claim 7, wherein the interconnects or the ring line are or is arranged in trench structures and partly form or forms the cell control electrodes.

9. The semiconductor component of claim 1, wherein the semiconductor component comprises a laterally oriented drift path and the first and second component electrodes and also the component control electrode are arranged on a common surface of the semiconductor body.

10. The semiconductor component of claim 1, wherein the semiconductor component comprises a vertically oriented drift path and the first and second component electrodes are arranged on opposite surfaces of the semiconductor body and the component control electrode is arranged on a surface jointly with the first component electrode.

11. The semiconductor component of claim 1, wherein the first cell electrode makes contact with a highly doped source zone of a MOSFET, or a highly doped emitter zone of an IGBT, which has the same conduction type as drift zones of the drift path.

12. The semiconductor component of claim 11, wherein the source zone or the emitter zone is surrounded by a body zone doped complementarily to the drift zones, and when a control voltage is applied to the cell control electrode a channel forms through the body zone towards the drift path.

13. The semiconductor component of claim 12, wherein the source zones in the body zones below the component control electrode are connected via an intermediate metallization structure in the partial region to the first component electrode above the first cell array.

14. The semiconductor component of claim 1, wherein the cell control electrodes in the first active cell array are arranged in trench structures and extend right into the second active cell array of the partial region.

15. The semiconductor component of claim 1, wherein the second cell electrodes of the first and second active semiconductor elements occupy respective portions of the second component electrode.

16. The semiconductor component of claim 15, wherein the second component electrode and the second cell electrodes of the first and second active semiconductor elements are situated on a rear side of the semiconductor body.

17. The semiconductor component of claim 15, wherein the first component electrode and the component control electrode are situated on a surface opposite the rear side of the semiconductor body.

18. The semiconductor component of claim 1, wherein the cell control electrodes of the first and second active semiconductor cells are connected to one another via a conductive trench structure arranged in a ring-shaped fashion, the conductive trench structure including:

a ring line trench; and

cell control connecting lines forming the cell control electrodes.

19. The semiconductor component of claim 1, wherein:

the first component electrode is a source electrode;

the second component electrode is a drain electrode; and

the component control electrode is a gate electrode.

20. The semiconductor component of claim 1, wherein:

the first cell electrode is a source electrode;

the second cell electrode is a drain electrode; and

the cell control electrode is a gate electrode.