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Semiconductor component

  • US 8,067,834 B2
  • Filed: 08/21/2007
  • Issued: 11/29/2011
  • Est. Priority Date: 08/21/2007
  • Status: Active Grant
First Claim
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1. A semiconductor component, comprising:

  • a heat spreader having a first surface and a cavity extending inward from the first surface;

    a semiconductor die, wherein a first portion of the semiconductor die is over the first surface and a second portion of the semiconductor die is over the cavity; and

    an interposer, wherein at least a portion of the interposer is in the cavity and wherein the interposer comprises;

    a dielectric material having a top surface and a bottom surface that is parallel to, or substantially parallel to, the top surface of the dielectric material;

    a plurality of conductive strips over the top surface of the dielectric material; and

    a leadframe structure coupled to at least one terminal of the semiconductor die;

    wherein a depth of the cavity of the heat spreader is greater than a thickness of the semiconductor die and wherein the leadframe structure has at least one opening;

    wherein a first conductive strip of the plurality of conductive strips has a surface that is coplanar to, or substantially coplanar to, the first surface of the heat spreader.

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