Method of fabricating a liquid crystal display device using gate and common links to link gate and common lines to gate and common pads

• US 8,068,205 B2
• Filed: 11/19/2009
• Issued: 11/29/2011
• Est. Priority Date: 06/30/2004
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: Ahn, Byung Chul
• Primary Examiner(s): Merlin; Jessica M
• Application Number:
  US12/591,450
• Publication Number:
  US 20100073622A1
• Time in Patent Office: 740 Days
• Field of Search: 349/190, 349/39, 349149-154
• US Class Current: 349/152
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/1345 Conductors connecting electrodes to cell terminals
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: Y02A 50/30 Against vector-borne diseases, e.g. mosquito-borne, fly-borne, tick-borne or waterborne diseases whose impact is exacerbated by climate change

Abstract

The present invention provides a liquid crystal display panel that is adaptive for preventing a liquid crystal contamination as well as improving an adhesive strength of a sealant and an organic insulating film, and a fabricating method thereof. A liquid crystal display device according to an embodiment of the present invention includes: a first and a second substrate having a liquid crystal region, a sealant region, and an outer region; a wiring disposed on the first substrate, the wiring crossing the sealant region; a gate insulating film disposed on the wiring; an organic insulating film disposed on a portion of the wiring; and a sealant disposed on the sealant region of the first and second substrates, wherein the sealant is in contact with the gate insulating film.

Claims

1. A method of fabricating a liquid crystal display device, comprising:

providing first and second substrates having a liquid crystal region, a sealant region, and an outer region;

forming a wiring on the first substrate, wherein the wiring crosses the sealant region;

forming an inorganic insulating film on the wiring;

forming an organic insulating film on the inorganic insulating film, wherein a portion of the inorganic insulating film is exposed in the sealant region; and

forming a liquid crystal layer between the first and second substrates using a sealant,

wherein forming the wiring includes;

forming a gate line and a first common line in the liquid crystal region, a gate pad lower electrode and a common pad lower electrode in the outer region, a common link connected to the common pad lower electrode and crossing the sealant region, and a gate link connecting the gate line to the gate pad lower electrode across the sealant region;

forming a second common line on the inorganic insulating film, the second common line crossing the gate line;

exposing a portion of the common pad lower electrode, a portion of the first common line, a portion of the second common line, and a portion of the common link when patterning the organic insulating film;

exposing the gate pad lower electrode and the first common line when patterning the inorganic insulating film; and

forming a gate pad upper electrode connected to the exposed gate pad lower electrode, a common pad upper electrode connected to the portion of the common pad lower electrode, a first contact electrode connected to the portion of the first common electrode and the portion of the second common lines, and a second contact electrode connected to the portion of the second common line and the portion of the common link.

2. The method of claim 1, wherein forming the inorganic insulating film includes patterning the inorganic insulating film.

3. The method of claim 1, wherein a portion of the first substrate is exposed between the wiring in the sealant region.

4. The method of claim 1, wherein forming the organic insulating film includes forming an organic insulating film that overlaps a portion of the sealant region.

5. The method of claim 4, further comprising forming a dummy pattern between the inorganic insulating film and the organic insulating film.

6. The method of claim 5, wherein the dummy pattern overlaps the sealant region and includes metal.

7. The method of claim 5, wherein forming a dummy pattern includes forming a semiconductor layer underneath the dummy pattern.

8. The method of claim 1, further comprising forming a dummy protective pattern on the organic insulating film in a region where the organic insulating film overlaps the sealant region.

9. The method of claim 8, wherein forming a dummy protective pattern includes forming a transparent conductive layer.

10. The method of claim 1, further comprising forming a second inorganic insulating film between the inorganic insulating film and the organic insulating film.

11. The method of claim 10, wherein the second insulating film has a substantially similar shape to the organic insulating film.

12. The method of claim 1, further comprising:

attaching a tape carrier package with a pad area having at least one of a gate pad and a data pad through an anisotropic conductive film; and

sealing the tape carrier package and the pad area using a second sealant.

13. The method of claim 12, wherein the second sealant surrounds a periphery of the tape carrier package.