Method for the wet-chemical treatment of a semiconductor wafer
First Claim
Patent Images
1. A method for the individual wet-chemical treatment of a semiconductor wafer, comprising:
- a) rotating a semiconductor wafer;
b) distributing a cleaning liquid comprising gas bubbles having a diameter of 100 μ
m or less onto the surface of the rotating semiconductor wafer, such that a liquid film having a thickness of greater than or equal to 1 μ
m and less than or equal to 100 μ
m forms on the semiconductor wafer surface;
c) exposing the rotating semiconductor wafer and liquid film to a gas atmosphere containing a reactive gas, wherein the reactive gas diffuses through the gas space of the microbubbles in the liquid film from the gas atmosphere and contacts the wafer surface; and
d) removing the liquid film.
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Abstract
A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 μm or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.
22 Citations
19 Claims
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1. A method for the individual wet-chemical treatment of a semiconductor wafer, comprising:
- a) rotating a semiconductor wafer;
b) distributing a cleaning liquid comprising gas bubbles having a diameter of 100 μ
m or less onto the surface of the rotating semiconductor wafer, such that a liquid film having a thickness of greater than or equal to 1 μ
m and less than or equal to 100 μ
m forms on the semiconductor wafer surface;
c) exposing the rotating semiconductor wafer and liquid film to a gas atmosphere containing a reactive gas, wherein the reactive gas diffuses through the gas space of the microbubbles in the liquid film from the gas atmosphere and contacts the wafer surface; and
d) removing the liquid film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
- a) rotating a semiconductor wafer;
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17. A method for the individual wet-chemical treatment of a semiconductor wafer, comprising placing the semiconductor wafer into a process chamber containing a gas atmosphere;
- supplying a liquid containing microbubbles having a diameter of 100 μ
m or less and distributing said liquid onto the surface of the wafer;
rotating the wafer at a rotational speed, the rotational speed causing the liquid to form a liquid film having a film thickness of 1 to 100 μ
m on the surface of the wafer, the thickness of the film being regulatable by adjusting the rotational speed of the wafer, the film being exposed to the gas atmosphere of the reaction chamber;
supplying a reactive gas to the gas atmosphere in the reaction chamber such that the reactive gas diffuses through the gas space of the microbubbles in the liquid film from the gas atmosphere and contacts the wafer surface; and
removing the liquid film from the wafer. - View Dependent Claims (18, 19)
- supplying a liquid containing microbubbles having a diameter of 100 μ
Specification