Organic field-effect transistor and circuit
First Claim
1. An organic field-effect transistor comprising:
- a gate electrode, a drain electrode and a source electrode,a dielectric layer, wherein the dielectric layer is in contact with the gate electrode,an active layer comprising an organic material, wherein the active layer is in contact with the drain electrode and the source electrode, wherein the active layer is electrically undoped, and wherein the active layer comprises a conduction channel between the drain electrode and the source electrode during operation,a dopant material layer, wherein the dopant material layer comprises a dopant material that is an electrical dopant for the organic material of the active layer, anda border surface region wherein a planar contact exists between the conduction channel of the active layer and the dopant material layer, and wherein a mobility of electrical charge carriers in the dopant material layer is no more than half a mobility of electrical charge carriers in the active layer.
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Accused Products
Abstract
The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.
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Citations
16 Claims
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1. An organic field-effect transistor comprising:
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a gate electrode, a drain electrode and a source electrode, a dielectric layer, wherein the dielectric layer is in contact with the gate electrode, an active layer comprising an organic material, wherein the active layer is in contact with the drain electrode and the source electrode, wherein the active layer is electrically undoped, and wherein the active layer comprises a conduction channel between the drain electrode and the source electrode during operation, a dopant material layer, wherein the dopant material layer comprises a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region wherein a planar contact exists between the conduction channel of the active layer and the dopant material layer, and wherein a mobility of electrical charge carriers in the dopant material layer is no more than half a mobility of electrical charge carriers in the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification