Optoelectronic component that emits electromagnetic radiation and illumination module

• US 8,071,990 B2
• Filed: 07/21/2005
• Issued: 12/06/2011
• Est. Priority Date: 07/26/2004
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Bogner, Georg, Engl, Moritz, Grötsch, Stefan, Kromotis, Patrick Joseph
• Primary Examiner(s): Nguyen, Cuong Q
• Assistant Examiner(s): Gebreyesus, Yosef
• Application Number:
  US11/658,822
• Publication Number:
  US 20090001490A1
• Time in Patent Office: 2,329 Days
• Field of Search: 257/98, 257/99, 257/100, 257/432, 257/435, 257/E31.127, 257/E31.106, 257/79, 257/88, 257/96, 257/97, 257/101, 257/102, 257/103, 362/244, 362/309, 362/332, 362/347, 362/509, 362/544, 362/545, 362/185, 362/249.02, 362/235, 362/236, 362/800, 362/249.06, 362/539, 362/543, 362/555, 362/84, 362/558, 362/230, 362/231, 362/249.01, 438/128, 438 22- 29, 438/46, 438/47, 438/129
• US Class Current: 257/98
• CPC Class Codes: F21S 41/143 the main emission direction of the LED being parallel to the optical axis of the illuminating device
• CPC Class Codes: F21S 41/151 arranged in one or more lines
• CPC Class Codes: F21S 41/176 Light sources where the light is generated by photoluminescent material spaced from a primary light generating element
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

An optoelectronic component emitting electromagnetic radiation, comprising a housing body which has a cavity, the cavity being fashioned trenchlike and in the cavity a plurality of semiconductor chips being arranged in a linear arrangement. Two neighboring semiconductor chips have a distance from one another which is less than or equal to one-and-a-half lateral edge lengths of the semiconductor chips and greater than or equal to 0 μm. In addition, an illumination module comprising such a component is disclosed.

Claims

1. An optoelectronic component emitting electromagnetic radiation, the optoelectronic component comprising:

a housing body which has a trench like cavity therein;

a plurality of semiconductor chips arranged on a substantially planar surface of a common carrier and linearly within said trench like cavity; and

at least one optical element provided to reduce a divergence of an electromagnetic radiation and jointly allocated to the plurality of semiconductor chips;

wherein two neighboring semiconductor chips have a distance from one another which is less than or equal to 1.5 times a top surface edge length of the plurality of semiconductor chips and greater than or equal to 0 μ

m,

wherein the optical element is a non-imaging optical concentrator having a concentrator exit,

wherein the concentrator exit of the non-imaging optical concentrator is arranged to be a radiation entry of the optical element so that the electromagnetic radiation passes through the non-imaging optical concentrator in a reverse concentration direction and is thus not concentrated but leaves the non-imaging optical concentrator with reduced divergence through a radiation exit of the optical element,

wherein an arrangement of the plurality of semiconductor chips has a first and a second end,

wherein the first end has at least two semiconductor chips which are arranged along a first straight line which is inclined with respect to a second straight line along which has at least second two semiconductor chips arranged at the second end,

wherein the first straight line is inclined with respect to the second straight line by an angle of inclination of less than or equal to 20° and

greater than or equal to 10°

, and

wherein the radiation entry has at least one of a radiation entry area and a radiation entry opening which has a width of less than or equal to 1.5-times an edge length of the plurality of semiconductor chips.

2. The optoelectronic component as claimed in claim 1, wherein the two neighboring semiconductor chips have a distance from one another of less than or equal to 300 μ

m and greater than or equal to 0 μ

m.

3. The optoelectronic component as claimed in claim 2, wherein the two neighboring semiconductor chips have a distance from one another of less than or equal to 100 μ

m and greater than or equal to 0 μ

m.

4. The optoelectronic component as claimed in claim 1, wherein the plurality of semiconductor chips are arranged at least one of on a printed circuit board and on a lead frame.

5. The optoelectronic component as claimed in claim 1, wherein the housing body has on one side along the arrangement of the plurality of semiconductor chips an inner wall delimiting the trench like cavity, at least a section of the inner wall being constructed as a screening wall which is reflective for at least one spectral band of the electromagnetic radiation.

6. The optoelectronic component as claimed in claim 5, wherein the screening wall extends at an angle of greater than or equal to 80°

and less than or equal to 110°

with respect to a mounting plane of the plurality of semiconductor chips.

7. The optoelectronic component as claimed in claim 5, wherein the plurality of semiconductor chips are arranged at a distance of less than or equal to 1 mm and greater than or equal to 0 mm from the screening wall.

8. The optoelectronic component as claimed in claim 5, wherein the plurality of semiconductor chips are arranged at a distance of less than or equal to 500 μ

m and greater than or equal to 0 μ

m from the screening wall.

9. The optoelectronic component as claimed in claim 8, wherein the plurality of semiconductor chips are arranged at a distance of less than or equal to 150 μ

m and greater than or equal to 0 μ

m from the screening wall.

10. The optoelectronic component as claimed in claim 1, wherein the electromagnetic radiation leaves the optical element in a radiation cone which has an aperture angle between 0 and 30°

, including the limits, in a plane perpendicular to a line along which the plurality of semiconductor chips are arranged.

11. The optoelectronic component as claimed in claim 1, wherein the non-imaging optical concentrator is one of a compound parabolic concentrator (CPC), a compound elliptic concentrator (CEC), and a compound hyperbolic concentrator (CHC).

12. The optoelectronic component as claimed claim 1, wherein the non-imaging optical concentrator has side walls which connect the radiation entry to the radiation exit and which are constructed in such a manner that direct connecting lines between the radiation entry and the radiation exit, extending on the side walls, are essentially straight.

13. The optoelectronic component as claimed in claim 1, wherein the non-imaging optical concentrator has a basic body which defines a cavity having an inner wall reflective at least for a spectral part-band of the electromagnetic radiation.

14. The optoelectronic component as claimed in claim 1, wherein the non-imaging optical concentrator is a dielectric concentrator, a basic body of which is a solid body consisting of a dielectric material having a suitable index of refraction so that radiation coupled in via the radiation entry is reflected by total reflection on lateral boundary faces of the solid body to a surrounding medium which connect the radiation entry to the radiation exit.

15. The optoelectronic component as claimed in claim 14, wherein the radiation exit is a boundary face of the solid body domed in the manner of a lens.

16. The optoelectronic component as claimed in claim 1, wherein a gap exists between the plurality of semiconductor chips and the radiation entry of the non-imaging optical concentrator.

17. The optoelectronic component as claimed in claim 16, wherein the gap is largely free of solid or liquid material.

18. The optoelectronic component as claimed in claim 1, wherein the component has a luminescence conversion element.

19. The optoelectronic component as claimed in claim 18, wherein the luminescence conversion element is intermixed in a casting compound transparent to radiation, by means of which the plurality of semiconductor chips are encapsulated.

20. The optoelectronic component as claimed in claim 19, wherein the casting compound has a thickness of less than or equal to 200 μ

m and greater than or equal to 5 μ

m over the plurality of semiconductor chips.

21. The optoelectronic component as claimed in claim 18, wherein the luminescence conversion element is applied to the plurality of semiconductor chips.

22. The optoelectronic component as claimed in claim 18, wherein a carrier body transparent to the electromagnetic radiation, on which the luminescence conversion element is applied, is arranged on the plurality of semiconductor chips.

23. The optoelectronic component as claimed in claim 22, wherein the luminescence conversion element is arranged on a side of the carrier body facing away from the plurality of semiconductor chips.

24. The optoelectronic component as claimed in claim 1, wherein the component has a diffuser material.

25. An illumination module, comprising an optoelectronic component as claimed in claim 1.

26. The illumination module as claimed in claim 25, wherein the illumination module is a headlamp module.

27. The illumination module as claimed in claim 25, wherein an overvoltage protection is provided for the optoelectronic component.

28. The illumination module as claimed in claim 27, wherein the overvoltage protection comprises at least one varistor.