Method of making nonvolatile memory device containing carbon or nitrogen doped diode
First Claim
Patent Images
1. A method of making a nonvolatile memory device, comprising:
- forming a first electrode;
forming at least one nonvolatile memory cell comprising a silicon, germanium or silicon-germanium diode;
intentionally doping at least a portion of the diode with at least one of nitrogen or carbon, wherein a concentration of carbon in the diode is lower than 1×
1021 cm−
3 and a concentration of nitrogen in the diode is lower than 1×
1021 cm−
3, and wherein the diode has a leakage current of less than 4×
10−
10 A at −
5.5 V in a high resistivity, reset state; and
forming a second electrode over the at least one nonvolatile memory cell.
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Abstract
A method of making a nonvolatile memory device includes forming a first electrode, forming at least one nonvolatile memory cell comprising a silicon, germanium or silicon-germanium diode, doping the diode with at least one of nitrogen or carbon, and forming a second electrode over the at least one nonvolatile memory cell.
70 Citations
21 Claims
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1. A method of making a nonvolatile memory device, comprising:
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forming a first electrode; forming at least one nonvolatile memory cell comprising a silicon, germanium or silicon-germanium diode; intentionally doping at least a portion of the diode with at least one of nitrogen or carbon, wherein a concentration of carbon in the diode is lower than 1×
1021 cm−
3 and a concentration of nitrogen in the diode is lower than 1×
1021 cm−
3, and wherein the diode has a leakage current of less than 4×
10−
10 A at −
5.5 V in a high resistivity, reset state; andforming a second electrode over the at least one nonvolatile memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of operating a nonvolatile memory device, comprising:
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providing at least one memory cell which comprises a silicon, germanium or silicon-germanium diode, at least a portion of the diode being doped with at least one of carbon or nitrogen in a concentration greater than 1×
1020 cm−
3, wherein the concentration of carbon in the diode is lower than 1×
1021 cm−
3and the concentration of nitrogen in the diode is lower than 1×
1021 cm−
3, and wherein the diode has been switched from a first higher resistivity, unprogrammed state to a second lower resistivity, programmed state; andapplying a reverse bias to the diode to switch the diode to a third resistivity, reset state, wherein the third resistivity state is higher than the second resistivity state, and wherein the diode has a leakage current of less than 4×
10−
10 A at −
5.5V in the high resistivity, reset state. - View Dependent Claims (18, 19, 21)
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20. A method of operating a nonvolatile memory device, comprising:
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providing at least one memory cell which comprises a silicon, germanium or silicon-germanium diode, at least an intrinsic region and at least one of a p-type and a n-type region being doped with at least one of carbon or nitrogen, wherein a concentration of carbon in the diode is lower than 1×
1021 cm−
3 and a concentration of nitrogen in the diode is lower than 1×
1021 cm31 3, and wherein the diode has been switched from a first higher resistivity, unprogrammed state to a second lower resistivity, programmed state; andapplying a reverse bias to the diode to switch the diode to a third resistivity, reset state, wherein the third resistivity state is higher than the second resistivity state wherein the diode has a leakage current of less than 4×
10−
10 A at −
5.5V in the high resistivity, reset state.
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Specification