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Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides

  • US 8,076,005 B2
  • Filed: 03/22/2007
  • Issued: 12/13/2011
  • Est. Priority Date: 05/23/2003
  • Status: Expired due to Fees
First Claim
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1. A titanium-based layer, comprising:

  • titanium, the amount of titanium in the layer being represented by Tix, where x is between about 1 and about 4; and

    oxygen, the amount of oxygen in the layer being represented by Oy, where y is between about 1 and about 7, wherein;

    the titanium-based layer is densified, has a uniform thickness, is substantially free from columnar structures, and has a figure of merit, defined as the product of a dielectric constant of the titanium-based layer and a breakdown voltage of the titanium based layer, greater than 200 through a deposition process using a pulsed-DC power supply, an RF-bias to the substrate, and reactive ion sputtering on a substrate, wherein the pulsed-DC power supply is applied to a conductive ceramic target through a narrow-band rejection filter centered to remove power from the RF-bias such that the target voltage oscillates between positive and negative voltages.

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