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Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates

  • US 8,076,176 B2
  • Filed: 11/24/2010
  • Issued: 12/13/2011
  • Est. Priority Date: 09/30/2008
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a thin film photovoltaic solar energy collector film comprising:

  • providing a plurality of substrates, each of the substrates having a copper and indium composite structure;

    transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, wherein N is greater than 5;

    introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350°

    C. to about 450°

    C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates;

    maintaining the temperature at about the second temperature for a period of time;

    removing at least residual selenide species from the furnace;

    introducing a sulfide species into the furnace; and

    increasing a temperature to a third temperature, the third temperature ranging from about 500 to 525°

    C. while the plurality of substrates are maintained in an environment including a sulfur species to extract out one or more selenium species from the copper indium diselenide film;

    wherein removing at least residual selenide species terminates a reaction to form the copper indium diselenide film.

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