Semiconductor device having electrical devices mounted to IPD structure and method of shielding electromagnetic interference

• US 8,076,757 B2
• Filed: 07/05/2010
• Issued: 12/13/2011
• Est. Priority Date: 06/04/2008
• Status: Active Grant

• Current Assignee: Stats Chippac Limited
• Original Assignee: Stats Chippac Limited
• Inventors: Pagaila, Reza A., Do, Byung Tai, Lin, Yaojian, Huang, Rui
• Primary Examiner(s): Smoot, Stephen W
• Application Number:
  US12/830,390
• Publication Number:
  US 20100270661A1
• Time in Patent Office: 526 Days
• Field of Search: 257/699
• US Class Current: 257/659
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/29 characterised by the material , e.g. carbon interlayer dielectrics H01L23/5329
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 25/165 Containers
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01073 Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/15192 : Resurf arrangement of the internal vias
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A semiconductor device has an IPD structure formed over a substrate. First and second electrical devices are mounted to a first surface of the IPD structure. An encapsulant is deposited over the first and second electrical devices and IPD structure. A shielding layer is formed over the encapsulant and electrically connected to a conductive channel in the IPD structure. The conductive channel is connected to ground potential to isolate the first and second electrical devices from external interference. A recess can be formed in the encapsulant material between the first and second electrical devices. The shielding layer extends into the recess. An interconnect structure is formed on a second surface of the IPD structure. The interconnect structure is electrically connected to the first and second electrical devices and IPD structure. A shielding cage can be formed over the first electrical device prior to depositing encapsulant.

Claims

1. A semiconductor device, comprising:

a substrate;

an integrated passive device (IPD) structure formed over the substrate;

first and second electrical devices mounted to a first surface of the IPD structure;

an encapsulant deposited over the first and second electrical devices and IPD structure;

a shielding layer formed over the encapsulant and electrically connected to a conductive channel in the IPD structure to isolate the first and second electrical devices from interference; and

an interconnect structure formed over a second surface of the IPD structure opposite the first surface of the IPD structure, the interconnect structure being electrically connected to the first and second electrical devices and IPD structure.

2. The semiconductor device of claim 1, further including a third electrical device mounted to the second surface of the IPD structure.

3. The semiconductor device of claim 2, wherein the first, second, and third electrical devices are electrically connected to conductive channels in the IPD structure.

4. The semiconductor device of claim 2, further including a shielding cage formed over the third electrical device.

5. The semiconductor device of claim 1, wherein the conductive channel is electrically connected to ground potential.

6. The semiconductor device of claim 1, further including a recess formed in the encapsulant material between the first and second electrical devices, wherein the shielding layer is formed over the encapsulant and extends into the recess.

7. The semiconductor device of claim 1, further including a shielding cage formed over the first electrical device.

8. A semiconductor device, comprising:

an integrated passive device (IPD) structure;

a first electrical device mounted to a first surface of the IPD structure;

an encapsulant deposited over the first electrical device and IPD structure; and

a shielding layer formed over the encapsulant and electrically connected to a conductive channel in the IPD structure to isolate the first electrical device from interference.

9. The semiconductor device of claim 8, further including an interconnect structure formed over a second surface of the IPD structure opposite the first surface of the IPD structure, the interconnect structure being electrically connected to the first electrical device and IPD structure.

10. The semiconductor device of claim 9, further including a second electrical device mounted to the second surface of the IPD structure.

11. The semiconductor device of claim 10, wherein the first and second electrical devices are electrically connected to conductive channels in the IPD structure.

12. The semiconductor device of claim 10, further including a shielding cage formed over the second electrical device.

13. The semiconductor device of claim 8, wherein the conductive channel is electrically connected to ground potential.

14. The semiconductor device of claim 8, further including:

a second electrical device mounted to the first surface of the IPD structure; and

a recess formed in the encapsulant between the first and second electrical devices, wherein the shielding layer is formed over the encapsulant and extends into the recess.

15. The semiconductor device of claim 8, further including a shielding cage formed over the first electrical device.

16. A semiconductor device, comprising:

an integrated passive device (IPD) structure;

a first electrical device mounted to a first surface of the IPD structure;

an encapsulant deposited over the first electrical device and IPD structure;

a shielding layer formed over the encapsulant; and

an interconnect structure formed over a second surface of the IPD structure opposite the first surface of the IPD structure, the interconnect structure being electrically connected to the first electrical device and IPD structure, the shielding layer being electrically connected to a conductive channel in the IPD structure to isolate the first electrical device from interference.

17. The semiconductor device of claim 16, wherein the conductive channel is electrically connected to ground potential.

18. The semiconductor device of claim 16, further including:

a second electrical device mounted to the first surface of the IPD structure; and

a recess formed in encapsulant between the first and second electrical devices, wherein the shielding layer is formed over the encapsulant and extends into the recess.

19. The semiconductor device of claim 16, further including a shielding cage formed over the first electrical device.

20. A semiconductor device, comprising:

a substrate;

a circuit structure formed over the substrate;

a first electrical device mounted to a first surface of the circuit structure;

an encapsulant deposited over the first electrical device and circuit structure;

a shielding layer formed over the encapsulant; and

an interconnect structure formed over a second surface of the circuit structure opposite the first surface of the circuit structure, the interconnect structure being electrically connected to the first electrical device and circuit structure, the shielding layer being electrically connected to a conductive channel in the circuit structure to isolate the first electrical device from interference.

21. The semiconductor device of claim 20, wherein the circuit structure includes an integrated passive device (IPD).

22. The semiconductor device of claim 20, wherein the conductive channel is electrically connected to ground potential.

23. The semiconductor device of claim 20, further including:

a second electrical device mounted to the first surface of the circuit structure; and

a recess formed in encapsulant material between the first and second electrical devices, wherein the shielding layer is formed over the encapsulant and extends into the recess.

24. The semiconductor device of claim 20, further including a shielding cage formed over the first electrical device.

25. The semiconductor device of claim 20, further including a second electrical device mounted to the second surface of the circuit structure, wherein the first and second electrical devices are electrically connected to conductive channels in the circuit structure.