Active matrix substrate having interleaved source and drain electrodes on circle semiconductor and display device including same
First Claim
1. An active matrix substrate, comprising:
- a scanning line on a substrate, the scanning line including a gate electrode;
a thin film transistor including (a) a semiconductor layer formed above the gate electrode, (b) a source electrode, and (c) a drain electrode, the source electrode and the drain electrode being surrounded by a sufficient margin of the semiconductor layer such that the source electrode and the drain electrode overlap with the semiconductor layer, wherein a circular shape for the semiconductor layer is obtained by etching a circular resist pattern being circular due to a shape of droplets of ink jet printing;
a signal line that is connected to the source electrode, and that crosses with the scanning line; and
a pixel electrode connected to the drain electrode,whereinthe drain electrode extended from the pixel electrode into a drain electrode formation region located to be kept within a semiconductor layer formation region, the drain electrode formation region sandwiched between a plurality of portions of the source electrode,the source electrode includes two acting parts having strip-like shapes protruding from the signal line, which is parallel to the gate line,the drain electrode includes an acting part having a strip-like shape which protrudes from the pixel electrode, which is parallel to the gate line, and is sandwiched by the acting parts of the source electrode,the gate electrode includes a part having a strip-like shape protruding from the gate line perpendicularly and overlapping with the acting parts of the source electrode and the acting part of the drain electrode,wherein the sufficient margin of the semiconductor layer includes a portion of the semiconductor layer that extends from a region that overlaps with substantially the entire area of the source electrode that surrounds the drain electrode to beyond outer edges of the outer perimeter of said area of the source electrode,wherein a Cgd region as a region consisting of portions of the drain electrode and the gate electrode that overlap each other is disposed in the central portion of the semiconductor layer having the circular shape, when viewed from the top.
1 Assignment
0 Petitions
Accused Products
Abstract
An active matrix includes (i) a thin film transistor including a semiconductor layer formed above a gate electrode, a source electrode, and a drain electrode, the source electrode and the drain electrode formed to overlap with the semiconductor layer; and (ii) a pixel electrode connected to the drain electrode, a pixel electrode connected to the drain electrode, the drain electrode extended from the pixel electrode into a drain electrode formation region located to be kept within a semiconductor layer formation region, the drain electrode formation region sandwiched between two portions of the source electrode. With this arrangement, even when the semiconductor layers in the TFTs (thin film transistors) have unevenness in sizes, shapes, and/or formation positions thereof, it is possible to prevent occurrence of unevenness (changes) in gate-drain capacitances cgd among the TFTs. Thereby, it is possible to provide an active matrix substrate having a high display characteristic.
-
Citations
36 Claims
-
1. An active matrix substrate, comprising:
-
a scanning line on a substrate, the scanning line including a gate electrode; a thin film transistor including (a) a semiconductor layer formed above the gate electrode, (b) a source electrode, and (c) a drain electrode, the source electrode and the drain electrode being surrounded by a sufficient margin of the semiconductor layer such that the source electrode and the drain electrode overlap with the semiconductor layer, wherein a circular shape for the semiconductor layer is obtained by etching a circular resist pattern being circular due to a shape of droplets of ink jet printing; a signal line that is connected to the source electrode, and that crosses with the scanning line; and a pixel electrode connected to the drain electrode, wherein the drain electrode extended from the pixel electrode into a drain electrode formation region located to be kept within a semiconductor layer formation region, the drain electrode formation region sandwiched between a plurality of portions of the source electrode, the source electrode includes two acting parts having strip-like shapes protruding from the signal line, which is parallel to the gate line, the drain electrode includes an acting part having a strip-like shape which protrudes from the pixel electrode, which is parallel to the gate line, and is sandwiched by the acting parts of the source electrode, the gate electrode includes a part having a strip-like shape protruding from the gate line perpendicularly and overlapping with the acting parts of the source electrode and the acting part of the drain electrode, wherein the sufficient margin of the semiconductor layer includes a portion of the semiconductor layer that extends from a region that overlaps with substantially the entire area of the source electrode that surrounds the drain electrode to beyond outer edges of the outer perimeter of said area of the source electrode, wherein a Cgd region as a region consisting of portions of the drain electrode and the gate electrode that overlap each other is disposed in the central portion of the semiconductor layer having the circular shape, when viewed from the top. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
-
19. A method of manufacturing an active matrix substrate, the method comprising steps of:
-
forming a scanning line on a substrate, the scanning line including a gate electrode; forming a thin film transistor including forming a circular shaped semiconductor layer above the gate electrode, wherein the shape of the semiconductor layer is obtained by etching a circular resist pattern being circular due to a shape of droplets of ink jet printing, forming a source electrode and a drain electrode, wherein the semiconductor layer is formed with a sufficient margin to surround the source electrode and the drain electrode such that the source electrode and the drain electrode overlap with the semiconductor layer; forming a signal line that is connected to the source electrode, and that crosses with the scanning line; and forming a pixel electrode connected to the drain electrode, wherein the drain electrode extends from the pixel electrode into a drain electrode formation region located to be kept within a semiconductor layer formation region, the drain electrode formation region sandwiched between a plurality of portions of the source electrode, the source electrode formed to include two acting parts having strip-like shapes protruding from the signal line, which is parallel to the gate line, the drain electrode formed to include an acting part having a strip-like shape which protrudes from the pixel electrode, which is parallel to the gate line, and is sandwiched by the acting parts of the source electrode, the gate electrode includes a part having a strip-like shape protruding from the gate line perpendicularly and overlapping with the acting parts of the source electrode and the acting part of the drain electrode, wherein the sufficient margin of the semiconductor layer includes a portion of the semiconductor layer that extends from a region that overlaps with substantially the entire area of the source electrode that surrounds the drain electrode to beyond outer edges of the outer perimeter of said area of the source electrode, wherein a Cgd region as a region consisting of portions of the drain electrode and the gate electrode that overlap each other is disposed in the central portion of the semiconductor layer having the circular shape, when viewed from the top. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
-
Specification