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Nonvolatile memory device and method of driving the same

  • US 8,077,496 B2
  • Filed: 09/23/2009
  • Issued: 12/13/2011
  • Est. Priority Date: 09/26/2008
  • Status: Expired due to Fees
First Claim
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1. A method of driving a nonvolatile memory device including a plurality of variable resistance memory cells, each of the plurality of variable resistance memory cells having a bit line coupled to the variable resistance memory cell and a column selection transistor coupled between the variable resistance memory cell and the bit line to receive a first control voltage being applied to a gate of the column selection transistor, the method comprising:

  • setting the first control voltage at a first level;

    changing a resistance of a selected memory cell from among the plurality of variable resistance memory cells by providing a write bias to the selected memory cell while setting the first control voltage;

    determining whether the changed resistance of the selected memory cell enters into a desired resistance window;

    changing, based on the determining step, the first control voltage to a second level that is different from the first level; and

    changing the resistance of the selected memory cells by providing the write bias to the selected memory cell while changing the first control voltage.

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