Embossing of microfluidic sensors

• US 8,080,152 B2
• Filed: 03/17/2004
• Issued: 12/20/2011
• Est. Priority Date: 03/18/2003
• Status: Active Grant

• Current Assignee: Cambridge Enterprises Limited
• Original Assignee: Cambridge Enterprises Limited
• Inventors: Sirringhaus, Henning
• Primary Examiner(s): Olsen, Kaj K
• Application Number:
  US10/549,329
• Publication Number:
  US 20060272942A1
• Time in Patent Office: 2,834 Days
• Field of Search: 204/400, 204/406, 204/403.01, 204/409, 204/416, 204/433, 264/284, 264/293, 257/253
• US Class Current: 205/775
• CPC Class Codes: B01L 3/5027 by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip B01L3/5023 takes precedence; micromixers B01F33/30; microreactors for synthesis B01J19/0093; microcapillary devices in general B81B1/00
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

An electrochemical sensor and method of its production comprising a microfluidic channel and an electronic sensing device on a first substrate, and a second substrate bonded to the first substrate so as to close the microfluidic channel, wherein a functional part of the electronic sensing device is exposed at the surface of the microfluidic channel and wherein the microfluidic channel is formed by embossing. In one embodiment the electronic device is a vertical-channel field-effect transistor.

Claims

1. A sensor comprising a first organic substrate having a microfluidic channel and an electronic sensing device located therein, and a second substrate bonded to the first substrate so as to close the microfluidic channel, wherein a conducting part of the electronic sensing device is exposed at the surface of the microfluidic channel, and said conducting part comprises poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulphonic acid).

2. A sensor according to claim 1 for sensing the presence of glucose in the microfluidic channel.

3. A method comprising:

defining in a single operation a microfluidic channel, and source and drain electrodes of a field-effect transistor,

forming over the source and drain electrodes, an active semiconducting layer, a gate dielectric layer and a gate electrode,

receiving a flow of liquid or gas in a portion of said microfluidic channel, and

sensing a property of said liquid or gas.

4. A method as claimed in claim 3 wherein the said operation is embossing.

5. A method according to claim 3 wherein the microfluidic channel is located in an organic substrate.

6. A method according to claim 3 wherein current flowing between the source and drain electrodes is sensitive to environmental conditions within the channel.

7. A method according to claim 6 wherein the environmental conditions are temperature.

8. A method according to claim 6 wherein the environmental conditions are the presence of a species to be sensed.

9. A method as claimed in claim 3 wherein said field-effect transistor is a vertical-channel field-effect transistor.

10. A method comprising:

forming a body comprising an electrically conductive layer;

embossing the body to define in a single operation a microfluidic channel and source and drain electrodes of a field-effect transistor, the source and drain electrodes being exposed at the surface of the channel;

forming over the source and drain electrodes, an active semiconducting layer, a dielectric layer and a gate electrode;

receiving a flow of a liquid or gas in at least a portion of said channel; and

sensing a property of said liquid or gas.

11. A method as claimed in claim 10 wherein defining said pair of electrodes comprises microcutting the electrically conductive layer.

12. A method as claimed in claim 10 further comprising depositing over the body a layer of a semiconductive material to form said active semiconducting layer.

13. A method as claimed in claim 12 further comprising depositing over the layer of semiconductive material a layer of an insulating material to form said gate dielectric layer.

14. A method as claimed in claim 13 further comprising depositing over the layer of insulating material a layer of a conductive material to form said gate electrode.