Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition

• US 8,080,365 B2
• Filed: 06/15/2010
• Issued: 12/20/2011
• Est. Priority Date: 12/14/2007
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Nozaki, Koji
• Primary Examiner(s): CHU, JOHN S Y
• Application Number:
  US12/815,462
• Publication Number:
  US 20100248154A1
• Time in Patent Office: 553 Days
• Field of Search: 430/311, 430/326, 430/910
• US Class Current: 430/311
• CPC Class Codes: C07D 335/02 not condensed with other rings
• CPC Class Codes: C08F 220/1811 C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
• CPC Class Codes: C08F 220/283 and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
• CPC Class Codes: C08F 220/38 Esters containing sulfur
• CPC Class Codes: Y10S 430/108 Polyolefin or halogen containing
• CPC Class Codes: Y10S 430/111 Polymer of unsaturated acid or ester

Abstract

To provide a thiopyran derivative, having a structure expressed by the following general formula 1:

where X is O or S; R₁ is —H, —CH₃, C2-4 alkyl group, thioether group, or ketone group; R₂ is —H, —CH₃, or trifluoromethyl group; and R₁ and R₂ may be identical to or different from each other.

Claims

1. A method for manufacturing a semiconductor device, comprising:

forming a resist film formed of a resist composition on a processing surface;

selectively exposing the resist film to light; and

developing the resist film so as to pattern the resist film,

wherein the resist composition contains a monomer unit containing a thiopyran derivative having the structure expressed by the general formula 1;

2. The method according to claim 1, wherein the selectively exposing is selectively exposing the resist film to light in accordance with liquid immersion lithography, and a medium used for the liquid immersion lithography is either water or a liquid having higher refractive index than that of water with respect to light having a wavelength of 193 nm.

3. The method according to claim 1, further comprising etching the processing surface using the pattern of the resist film as a mask so as to pattern the processing surface.

4. The method according to claim 3, wherein the processing surface is a surface of a base, the base being formed of an insulating material having a dielectric constant of 2.7 or less.