Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition
First Claim
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1. A method for manufacturing a semiconductor device, comprising:
- forming a resist film formed of a resist composition on a processing surface;
selectively exposing the resist film to light; and
developing the resist film so as to pattern the resist film,wherein the resist composition contains a monomer unit containing a thiopyran derivative having the structure expressed by the general formula 1;
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Abstract
To provide a thiopyran derivative, having a structure expressed by the following general formula 1:
where X is O or S; R1 is —H, —CH3, C2-4 alkyl group, thioether group, or ketone group; R2 is —H, —CH3, or trifluoromethyl group; and R1 and R2 may be identical to or different from each other.
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Citations
4 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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forming a resist film formed of a resist composition on a processing surface; selectively exposing the resist film to light; and developing the resist film so as to pattern the resist film, wherein the resist composition contains a monomer unit containing a thiopyran derivative having the structure expressed by the general formula 1; - View Dependent Claims (2, 3, 4)
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Specification