×

Semiconductor device manufacturing method and silicon oxide film forming method

  • US 8,080,463 B2
  • Filed: 01/21/2010
  • Issued: 12/20/2011
  • Est. Priority Date: 01/23/2009
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device manufacturing method comprising:

  • forming an element isolation trench in a semiconductor substrate;

    forming a silicon compound film in insides of the element isolation trench in order to embed the element isolation trench before a first oxidation process;

    conducting the first oxidation process to reform a surface of the silicon compound film; and

    conducting a second oxidation process to form a coated silicon oxide film from the silicon compound film,wherein the first oxidation process at a first temperature reforms the surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms; and

    wherein the second oxidation process is conducted at a second temperature which is higher than the first temperature.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×