Method of forming fine patterns and manufacturing semiconductor light emitting device using the same
First Claim
1. A method of forming a fine pattern, the method comprising:
- providing a c-plane hexagonal semiconductor crystal;
forming a mask having a predetermined pattern on the semiconductor crystal;
dry-etching the semiconductor crystal by using the mask to form a first fine pattern on the semiconductor crystal; and
wet-etching the semiconductor crystal including the first fine pattern to form a second fine pattern by expanding the wet-etching from an inside sidewall of the first fine pattern in a horizontal direction,wherein the second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively.
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Abstract
A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern on the semiconductor crystal. The semiconductor crystal including the first fine pattern is wet-etched to expand the first fine pattern in a horizontal direction to form a second fine pattern. The second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. The present fine-pattern forming process can be advantageously applied to a semiconductor light emitting device, particularly, to a phonic crystal structure required to have fine patterns or a structure using a surface plasmon resonance principle.
12 Citations
26 Claims
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1. A method of forming a fine pattern, the method comprising:
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providing a c-plane hexagonal semiconductor crystal; forming a mask having a predetermined pattern on the semiconductor crystal; dry-etching the semiconductor crystal by using the mask to form a first fine pattern on the semiconductor crystal; and wet-etching the semiconductor crystal including the first fine pattern to form a second fine pattern by expanding the wet-etching from an inside sidewall of the first fine pattern in a horizontal direction, wherein the second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. - View Dependent Claims (2, 3, 4, 5, 6, 8, 9, 10, 11)
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7. A method of forming a fine pattern, the method comprising:
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providing a c-plane hexagonal semiconductor crystal; forming a mask having a predetermined pattern on the semiconductor crystal; dry-etching the semiconductor crystal by using the mask to form a first fine pattern on the semiconductor crystal; and wet-etching the semiconductor crystal including the first fine pattern from an inside sidewall to expand the first fine pattern in a horizontal direction to form a second pattern, wherein the second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively, wherein the forming a second fine pattern comprises performing wet-etching such that the sidewall of the second fine pattern has an m-plane component and an s-plane component.
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12. A method of manufacturing a semiconductor light emitting device, the method comprising:
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providing a multilayered semiconductor structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers; forming a mask having a predetermined pattern on the second conductivity type semiconductor layer of the multilayered semiconductor structure; dry-etching the second conductivity type semiconductor layer by using the mask to form a first fine pattern on the second conductivity type semiconductor layer; wet-etching the second conductivity type semiconductor layer including the first fine pattern to form a second fine pattern by expanding the wet-etching from an inside sidewall of the first fine pattern in a horizontal direction; and forming a first electrode and a second electrode in a state where the mask has been removed, the first and second electrode respectively being connected with the first and second conductivity type semiconductor layers, wherein the second conductivity type semiconductor layer is a c-plane hexagonal semiconductor crystal, and the second fine pattern obtained from the wet-etching the second conductivity type semiconductor layer has a bottom surface and a sidewall that have unique crystal planes, respectively. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 23, 24, 25, 26)
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22. A method of forming a fine pattern, the method comprising:
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providing a c-plane hexagonal semiconductor crystal; forming a mask having a predetermined pattern on the semiconductor crystal; dry-etching the semiconductor crystal by using the mask to form a first fine pattern on the semiconductor crystal; and wet-etching the semiconductor crystal including the first fine pattern from an inside sidewall to expand the first fine pattern in a horizontal direction to form a second pattern, wherein the second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively, wherein the forming a second fine pattern comprises performing wet-etching such that the sidewall of the second fine pattern has an m-plane component and an s-plane component.
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Specification