Thick pseudomorphic nitride epitaxial layers

• US 8,080,833 B2
• Filed: 04/21/2010
• Issued: 12/20/2011
• Est. Priority Date: 01/26/2007
• Status: Active Grant

• Current Assignee: Crystal IS, Inc. (Asahi Kasei Corporation)
• Original Assignee: Crystal IS, Inc. (Asahi Kasei Corporation)
• Inventors: Grandusky, James R., Schowalter, Leo J., Gibb, Shawn R., Smart, Joseph A., Liu, Shiwen
• Primary Examiner(s): Jackson, Jr., Jerome
• Application Number:
  US12/764,584
• Publication Number:
  US 20100264460A1
• Time in Patent Office: 608 Days
• Field of Search: 257/190, 257/94
• US Class Current: 257/190
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.

Claims

1. A semiconductor device comprising:

an aluminum nitride single-crystal substrate;

at least one pseudomorphic strained layer disposed thereover, the strained layer comprising at least one of AlN, GaN, InN, or an alloy thereof; and

disposed over the at least one strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.

2. The semiconductor device of claim 1, wherein the relaxed semiconductor layer comprises a plurality of defects, the defects not propagating into the at least one strained layer.

3. The semiconductor device of claim 1, further comprising a metal contact layer disposed over the relaxed semiconductor layer.

4. The semiconductor device of claim 1, wherein the relaxed semiconductor layer comprises p-type-doped gallium nitride.

5. The semiconductor device of claim 1, wherein the relaxed semiconductor layer is p-type doped to a hole concentration at room temperature ranging between approximately 1×

10¹⁷/cm³ and approximately 1×

10²⁰/cm³.

6. The semiconductor device of claim 1, further comprising, disposed on a bottom surface of the substrate, a pattern comprising a plurality of cones.

7. The semiconductor device of claim 6, wherein each of the plurality of cones has an apex angle of approximately 26°

.

8. The semiconductor device of claim 1, wherein a defect density of the relaxed semiconductor layer is at least two orders of magnitude larger than a defect density of the substrate.

17. The semiconductor device of claim 1, wherein the relaxed semiconductor layer consists essentially of doped or undoped GaN.

19. The semiconductor device of claim 1, further comprising an array of misfit dislocations at an interface between the relaxed semiconductor layer and a layer disposed beneath and in direct contact with the relaxed semiconductor layer.

9. A method of forming a semiconductor device, the method comprising:

forming, over a single-crystal substrate, at least one pseudomorphic strained layer comprising at least one of AlN, GaN, InN, or an alloy thereof; and

forming, over the at least one strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed without (i) relaxing the at least one strained layer, and (ii) propagation of defects from the semiconductor layer into the at least one strained layer.

10. The method of claim 9, further comprising forming a metal contact layer over the relaxed semiconductor layer.

11. The method of claim 9, wherein the substrate comprises aluminum nitride and the relaxed semiconductor layer comprises gallium nitride.

12. The method of claim 9, wherein forming the relaxed semiconductor layer comprises forming at least a portion of the relaxed semiconductor layer as a series of islands.

13. The method of claim 9, wherein the at least one strained layer and the relaxed semiconductor layer are both formed by epitaxial deposition.

14. The method of claim 9, further comprising forming a pattern of cones on a back surface of the substrate.

15. The method of claim 14, wherein the pattern is formed by etching.

16. The method of claim 9, further comprising removing at least a portion of the substrate.

18. The method of claim 9, wherein the relaxed semiconductor layer consists essentially of doped or undoped GaN.

20. The method of claim 9, wherein forming the relaxed semiconductor layer comprises forming an array of misfit dislocations at an interface between the relaxed semiconductor layer and a layer disposed beneath and in direct contact with the relaxed semiconductor layer.