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Thick pseudomorphic nitride epitaxial layers

  • US 8,080,833 B2
  • Filed: 04/21/2010
  • Issued: 12/20/2011
  • Est. Priority Date: 01/26/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an aluminum nitride single-crystal substrate;

    at least one pseudomorphic strained layer disposed thereover, the strained layer comprising at least one of AlN, GaN, InN, or an alloy thereof; and

    disposed over the at least one strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.

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