Wafer level package structure and production method therefor
First Claim
1. A wafer level package structure comprising:
- a semiconductor wafer having a plurality of sensor units; and
a package wafer bonded to a surface of said semiconductor wafer;
wherein said semiconductor wafer has a first metal layer formed on each of said sensor units;
said package wafer has a bonding metal layer on a position facing said first metal layer; and
the bonding between said semiconductor wafer and said package wafer comprises a solid-phase direct bonding without diffusion between an activated surface of said first metal layer and an activated surface of said bonding metal layer,wherein each of said sensor units comprises a frame having an opening, a movable portion held in said opening to be movable relative to said frame, and a detecting portion configured to output an electric signal according to a positional displacement of said movable portion,wherein at least one of said first metal layer and said bonding metal layer comprises a ring-like outer metal layer formed around said movable portion, and a ring-like inner metal layer formed at an inner side of said outer metal layer around said movable portion,wherein each of said first metal layer and said bonding metal layer comprises said outer metal layer, said inner metal layer, and an auxiliary sealing layer connecting between said outer metal layer and said inner metal layer, which is formed at plural locations spaced from each other by a predetermined distance in a circumferential direction of said inner metal layer, andeach of a bonding between said outer metal layers, a bonding between said inner metal layers, and a bonding between said auxiliary sealing layers is provided by the solid-phase direct bonding.
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Accused Products
Abstract
A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.
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Citations
13 Claims
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1. A wafer level package structure comprising:
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a semiconductor wafer having a plurality of sensor units; and a package wafer bonded to a surface of said semiconductor wafer; wherein said semiconductor wafer has a first metal layer formed on each of said sensor units; said package wafer has a bonding metal layer on a position facing said first metal layer; and the bonding between said semiconductor wafer and said package wafer comprises a solid-phase direct bonding without diffusion between an activated surface of said first metal layer and an activated surface of said bonding metal layer, wherein each of said sensor units comprises a frame having an opening, a movable portion held in said opening to be movable relative to said frame, and a detecting portion configured to output an electric signal according to a positional displacement of said movable portion, wherein at least one of said first metal layer and said bonding metal layer comprises a ring-like outer metal layer formed around said movable portion, and a ring-like inner metal layer formed at an inner side of said outer metal layer around said movable portion, wherein each of said first metal layer and said bonding metal layer comprises said outer metal layer, said inner metal layer, and an auxiliary sealing layer connecting between said outer metal layer and said inner metal layer, which is formed at plural locations spaced from each other by a predetermined distance in a circumferential direction of said inner metal layer, and each of a bonding between said outer metal layers, a bonding between said inner metal layers, and a bonding between said auxiliary sealing layers is provided by the solid-phase direct bonding. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification