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Semiconductor device having insulating film with surface modification layer and method for manufacturing the same

  • US 8,080,878 B2
  • Filed: 09/11/2009
  • Issued: 12/20/2011
  • Est. Priority Date: 09/11/2008
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a first insulating film including a first SiOCH film formed on the semiconductor substrate;

    a surface modification layer including a second SiOCH film formed by modifying a surface layer of the first insulating film, the second SiOCH film having a lower atomic carbon concentration and a higher atomic oxygen concentration than the first insulating film;

    a metal wiring filled in a recess formed in the surface modification layer and the first insulating film; and

    a second insulating film contacting surfaces of the metal wiring and the surface modification layer.

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