Semiconductor device having insulating film with surface modification layer and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate;
a first insulating film including a first SiOCH film formed on the semiconductor substrate;
a surface modification layer including a second SiOCH film formed by modifying a surface layer of the first insulating film, the second SiOCH film having a lower atomic carbon concentration and a higher atomic oxygen concentration than the first insulating film;
a metal wiring filled in a recess formed in the surface modification layer and the first insulating film; and
a second insulating film contacting surfaces of the metal wiring and the surface modification layer.
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Abstract
Provided is a semiconductor device, which includes an interlayer insulating film formed on a semiconductor substrate, a wiring layer filled in a recess formed in the interlayer insulating film, and a cap insulating film. The interlayer insulating film includes a first SiOCH film and a surface modification layer including an SiOCH film formed by modifying a surface layer of the first SiOCH film, the SiOCH film having a lower carbon concentration and a higher oxygen concentration than the first SiOCH film has. The cap insulating film contacts with surfaces of the metal wiring and the surface modification layer.
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Citations
14 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a first insulating film including a first SiOCH film formed on the semiconductor substrate; a surface modification layer including a second SiOCH film formed by modifying a surface layer of the first insulating film, the second SiOCH film having a lower atomic carbon concentration and a higher atomic oxygen concentration than the first insulating film; a metal wiring filled in a recess formed in the surface modification layer and the first insulating film; and a second insulating film contacting surfaces of the metal wiring and the surface modification layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a semiconductor substrate; a first insulating film including a first SiOCH film formed on the semiconductor substrate; a surface modification layer including a second SiOCH film, the second SiOCH film having a lower atomic carbon concentration and a higher atomic oxygen concentration than the first SiOCH film; a metal wiring filled in a recess formed in the surface modification layer and the first insulating film; and a second insulating film contacting surfaces of the metal wiring and the surface modification layer. - View Dependent Claims (13, 14)
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Specification