Semiconductor device having variable parameter selection based on temperature and test method

• US 8,081,532 B2
• Filed: 06/04/2010
• Issued: 12/20/2011
• Est. Priority Date: 04/19/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Intellectual Ventures Holding 83 LLC (Intellectual Ventures LLC)
• Inventors: Walker, Darryl G.
• Primary Examiner(s): Nguyen, Dang
• Application Number:
  US12/793,845
• Publication Number:
  US 20110046912A1
• Time in Patent Office: 564 Days
• Field of Search: 365/211, 365/212, 365/189.02, 365/185.18, 365/185.22, 365/185.24, 365/189.03, 365/189.07, 365/189.08, 702/130, 361/103
• US Class Current: 365/211
• CPC Class Codes: G01K 7/425 Thermal management of integrated systems

Abstract

A semiconductor device includes a first temperature sensing circuit, a multiplexer, and an output circuit. The first temperature sensing circuit can be configured to provide a first temperature indication based on a first temperature threshold value. The first temperature indication can include a first temperature indication logic level. The multiplexer can include a first multiplexer input configured to receive the first temperature indication, a second multiplexer input configured to receive a data signal, and a third multiplexer input configured to receive a temperature read enable signal. The multiplexer can be configured to provide a first multiplexer output. The output circuit can include a first output terminal. The output circuit can be configured to receive the first multiplexer output. The multiplexer and the output circuit can be configured to provide the first temperature indication to the first output terminal when the temperature read enable is enabled.

Claims

1. A semiconductor device comprising:

a first temperature-sensing circuit configured to provide a first temperature indication based on a first temperature threshold value, wherein the first temperature indication comprises a first temperature indication logic level;

a multiplexer including a first multiplexer input configured to receive the first temperature indication, a second multiplexer input configured to receive a data signal, and a third multiplexer input configured to receive a temperature read enable signal, wherein the multiplexer is configured to provide a first multiplexer output; and

an output circuit including a first output terminal, wherein the output circuit is configured to receive the first multiplexer output;

wherein the multiplexer and the output circuit are further configured to provide the first temperature indication to the first output terminal when the temperature read enable signal is enabled.

2. The semiconductor device of claim 1, wherein the first temperature-sensing circuit comprises a hysteresis value, and wherein the first temperature indication is based, at least in part, on the hysteresis value.

3. The semiconductor device of claim 2, wherein the first temperature-sensing circuit further comprises:

an amplifier including a positive input and a negative input, wherein the negative input is configured to be driven by a temperature-independent signal;

a first transistor electrically connected to the positive input, wherein the first transistor is configured to be controlled by a temperature signal; and

a temperature threshold resistance associated with the first temperature threshold value and a hysteresis resistance associated with the hysteresis value, wherein the temperature threshold resistance and the hysteresis resistance are electrically connected in series to the positive input.

4. The semiconductor device of claim 3, wherein the hysteresis resistance comprises a second transistor electrically connected in parallel with the hysteresis resistance, and wherein the second transistor is configured to be controlled by an output of the amplifier.

5. The semiconductor device of claim 3, wherein the temperature threshold resistance and the hysteresis resistance are each variable resistances.

6. The semiconductor device of claim 5, wherein the temperature threshold resistance and the hysteresis resistance are programmable.

7. The semiconductor device of claim 1, further comprising:

a second temperature-sensing circuit configured to provide a second temperature indication based on a second temperature threshold value, wherein the second temperature indication comprises a second temperature indication logic level, and wherein the multiplexer further comprises a third multiplexer input configured to receive the second temperature indication.

8. A method comprising:

sensing a first temperature with a first temperature-sensing circuit that is configured to provide a first temperature indication based on a first temperature threshold value, wherein the first temperature indication comprises a first temperature indication logic level;

enabling a multiplexer that comprises a first multiplexer input configured to receive the first temperature indication and a second multiplexer input configured to receive a data signal, wherein the multiplexer is configured to provide a first multiplexer output; and

enabling an output circuit that comprises a first output terminal, wherein the output circuit is configured to receive the first multiplexer output;

wherein the first output terminal is configured to output the first temperature indication.

9. The method of claim 8, wherein the first temperature-sensing circuit comprises a hysteresis value, and wherein the first temperature indication is based, at least in part, on the hysteresis value.

10. The method of claim 9, wherein the first temperature-sensing circuit further comprises:

an amplifier including a positive input and a negative input, wherein the negative input is configured to be driven by a temperature-independent signal;

a first transistor electrically connected to the positive input, wherein the first transistor is configured to be controlled by a temperature signal; and

a temperature threshold resistance associated with the first temperature threshold value and a hysteresis resistance associated with the hysteresis value, wherein the temperature threshold resistance and the hysteresis resistance are electrically connected in series to the positive input.

11. The method of claim 10, wherein the hysteresis resistance comprises a second transistor electrically connected in parallel with the hysteresis resistance, and wherein the second transistor is configured to be controlled by an output of the amplifier.

12. The method of claim 10, wherein the temperature threshold resistance and the hysteresis resistance are each variable resistances.

13. The method of claim 12, further comprising programming at least one of the temperature threshold resistance or the hysteresis resistance.

14. The method of claim 8, further comprising:

sensing a second temperature with a second temperature-sensing circuit configured to provide a second temperature indication based on a second temperature threshold value, wherein the second temperature indication comprises a second temperature indication logic level, and wherein the multiplexer further comprises a third multiplexer input configured to receive the second temperature indication.

15. A computer-readable medium having instructions stored thereon that, if executed by a computing device, cause the computing device to perform operations comprising:

reading a first temperature indication of a first temperature-sensing circuit based on a first temperature threshold value, wherein the first temperature indication comprises a first temperature indication logic level;

enabling a multiplexer that comprises a first multiplexer input configured to receive the first temperature indication and a second multiplexer input configured to receive a data signal, wherein the multiplexer is configured to provide a first multiplexer output; and

enabling an output circuit that comprises a first output terminal, wherein the output circuit is configured to receive the first multiplexer output, and wherein the first output terminal is configured to output the first temperature indication; and

controlling an electronic device based on the first temperature indication.

16. The computer-readable medium of claim 15, wherein the first temperature-sensing circuit comprises a hysteresis value, and wherein the first temperature indication is based, at least in part, on the hysteresis value.

17. The computer-readable medium of claim 16, wherein the first temperature-sensing circuit further comprises:

an amplifier including a positive input and a negative input, wherein the negative input is configured to be driven by a temperature-independent signal;

a transistor electrically connected to the positive input, wherein the transistor is configured to be controlled by a temperature signal;

a temperature threshold resistance associated with the first temperature threshold value and a hysteresis resistance associated with the hysteresis value, wherein the temperature threshold resistance and the hysteresis resistance are electrically connected in series to the positive input.

18. The computer-readable medium of claim 17, wherein the operations further comprise programming at least one of the temperature threshold resistance or the hysteresis value.

19. The computer-readable medium of claim 15, wherein the electronic device comprises a cooling device.

20. The computer-readable medium of claim 18, wherein the operations further comprise:

reading a second temperature indication of a second temperature-sensing circuit based on a second temperature threshold value, wherein the second temperature indication comprises a second temperature indication logic level; and

controlling the electronic device based on the second temperature indication.