Securities, chip mounting product, and manufacturing method thereof

• US 8,083,153 B2
• Filed: 12/23/2010
• Issued: 12/27/2011
• Est. Priority Date: 12/26/2003
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Kato, Kiyoshi
• Primary Examiner(s): Frech, Karl D.
• Application Number:
  US12/977,878
• Publication Number:
  US 20110089427A1
• Time in Patent Office: 369 Days
• Field of Search: 235/487, 235/494, 235/380, 235/375, 235/492
• US Class Current: 235/492
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/07758 arrangements for adhering the record carrier to further objects or living beings, functioning as an identification tag
• CPC Class Codes: G06K 19/07767 the first and second communication means being two different antennas types, e.g. dipole and coil type, or two antennas of the same kind but operating at different frequencies
• CPC Class Codes: G07D 7/01 Testing electronic circuits therein
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention provides an ID chip with reduced cost, increased impact resistance and attractive design, as well as products and the like mounting the ID chip and a manufacturing method thereof. In view of the foregoing, an integrated circuit having a semiconductor film with a thickness of 0.2 μm or less is mounted on securities including bills, belongings, containers of food and drink, and the like (hereinafter referred to as products and the like). The ID chip of the invention can be reduced in cost and increased in impact resistance as compared with a chip formed over a silicon wafer while maintaining an attractive design.

Claims

1. A semiconductor device comprising:

a circuit including;

a memory cell including a transistor;

a first wiring; and

a second wiring

wherein one of a source and a drain of the transistor is connected to one of the first wiring and the second wiring by disconnecting the other of the first wiring and the second wiring with laser cutting.

2. The semiconductor device according to claim 1, wherein the transistor is a thin film transistor.

3. The semiconductor device according to claim 1, wherein the memory cell is a non-volatile and non-rewritable memory cell.

4. The semiconductor device according to claim 1, wherein the laser cutting is performed to input the data to the circuit.

5. The semiconductor device according to claim 1, wherein data inputted to the circuit is configured to be read by a portable electronic device comprising a reader.

6. The semiconductor device according to claim 5,

wherein the circuit is mounted to a product, and

wherein the data includes information about the product.

7. The semiconductor device according to claim 1, further comprising an antenna electrically connected to the circuit.

8. A semiconductor device comprising:

a circuit including;

a memory cell including a transistor;

a bit line;

a word line;

a first wiring; and

a second wiring

wherein one of a source and a drain of the transistor is connected to one of the first wiring and the second wiring by disconnecting the other of the first wiring and the second wiring with laser cutting,

wherein the bit line is connected to the other of the source and the drain of the transistor, and

wherein the word line is connected to a gate of the transistor.

9. The semiconductor device according to claim 8, wherein the transistor is a thin film transistor.

10. The semiconductor device according to claim 8, wherein the memory cell is a non-volatile and non-rewritable memory cell.

11. The semiconductor device according to claim 8, wherein the laser cutting is performed to input the data to the circuit.

12. The semiconductor device according to claim 8, wherein data inputted to the circuit is configured to be read by a portable electronic device comprising a reader.

13. The semiconductor device according to claim 12,

wherein the circuit is mounted to a product, and

wherein the data includes information about the product.

14. The semiconductor device according to claim 8, further comprising an antenna electrically connected to the circuit.

15. A manufacturing method of a semiconductor device, comprising the steps of:

forming a semiconductor film;

forming a first wiring and a second wiring over the semiconductor film;

disconnecting one of the first wiring and the second wiring with laser cutting, whereby connecting the semiconductor film to the other of the first wiring and the second wiring; and

forming a memory cell including the semiconductor film and the other of the first wiring and the second wiring by the disconnecting step.

16. The manufacturing method of a semiconductor device according to claim 15, wherein the semiconductor film is a crystalline semiconductor film.

17. The manufacturing method of a semiconductor device according to claim 15, wherein the memory cell is a non-volatile and non-rewritable memory cell.

18. The manufacturing method of a semiconductor device according to claim 15, wherein the laser cutting is performed to input data to the memory cell.

19. The manufacturing method of a semiconductor device according to claim 15, wherein data inputted to the memory cell is configured to be read by a portable electronic device comprising a reader.

20. A manufacturing method of a semiconductor device, comprising the steps of:

forming a transistor;

forming a first wiring and a second wiring over the transistor;

disconnecting one of the first wiring and the second wiring with laser cutting, whereby connecting one of a source and a drain of the transistor to the other of the first wiring and the second wiring; and

forming a memory cell including the transistor and the other of the first wiring and the second wiring by the disconnecting step.

21. The manufacturing method of a semiconductor device according to claim 20, wherein the transistor is a thin film transistor.

22. The manufacturing method of a semiconductor device according to claim 20, wherein the memory cell is a non-volatile and non-rewritable memory cell.

23. The manufacturing method of a semiconductor device according to claim 20, wherein the laser cutting is performed to input data to the memory cell.

24. The manufacturing method of a semiconductor device according to claim 20, wherein data inputted to the memory cell is configured to be read by a portable electronic device comprising a reader.