Etching endpoint determination method

• US 8,083,960 B2
• Filed: 08/12/2008
• Issued: 12/27/2011
• Est. Priority Date: 02/27/2008
• Status: Expired due to Fees

• Current Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Shiraishi, Daisuke, Ikuhara, Shoji, Kagoshima, Akira, Uchida, Hiroshige
• Primary Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US12/189,883
• Publication Number:
  US 20090211706A1
• Time in Patent Office: 1,232 Days
• Field of Search: None
• US Class Current: 216/60
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection

Abstract

A microscopic change in a luminous intensity occurring near an etching endpoint is accurately detected, whereby the endpoint of etching is quickly determined. An etching endpoint determination method for determining an endpoint of etching processing in a plasma etching apparatus that introduces a processing gas into a vacuum chamber, produces plasma by feeding high-frequency energy to a introduced processing gas, and uses the produced plasma to perform plasma processing on a workpiece stored in the chamber includes: a step of sampling light of a pre-set wavelength from light emitted by the plasma produced in the vacuum chamber, acquiring as time-sequential data the luminous intensity of the sampled light of the specific wavelength, and computing a regression line on the basis of the acquired time-sequential data; and a step of computing distances in a time-base direction between the regression line and the time-sequential data which are obtained at the first step. An endpoint of etching processing is determined based in the distances in the time-base direction obtained at the second step.

Claims

1. An etching endpoint determination method for determining an endpoint of etching processing which is implemented in a plasma etching apparatus that introduces a processing gas into a vacuum processing chamber via a gas introduction means, produces plasma by feeding high-frequency energy to the introduced processing gas, and uses the produced plasma to perform plasma processing on a workpiece stored in the processing chamber, comprising the steps of:

sampling light of a pre-set wavelength from light emitted by the plasma produced in the vacuum processing chamber, acquiring as time-sequential data the luminous intensity of the sampled light of the specific wavelength, and computing a regression line on the basis of the acquired time-sequential data; and

computing distances in a time-base direction between the regression line and the time-sequential data which are obtained at the first step,

wherein an endpoint of etching processing is determined based on the distances in the time-base direction obtained at the second step.

2. An etching endpoint determination method for determining an endpoint of etching processing which is implemented in a plasma etching apparatus that introduces a processing gas into a vacuum processing chamber via a gas introduction means, produces plasma by feeding high-frequency energy to the introduced processing gas, and uses the produced plasma to perform plasma processing on a workpiece stored in the processing chamber, comprising the steps of:

sampling light of a pre-set wavelength from light emitted by the plasma produced in the vacuum processing chamber, acquiring as time-sequential data the luminous intensity of the sampled light of the specific wavelength, and computing a regression line on the basis of the acquired time-sequential data; and

computing distances in a time-base direction between the regression line and the time-sequential data which are obtained at the first step,

wherein an endpoint of etching processing is determined based on the distances in the time-base direction obtained at the second step and the slope of the regression line.

3. An etching endpoint determination method for determining an endpoint of etching processing which is implemented in a plasma etching apparatus that introduces a processing gas into a vacuum processing chamber via a gas introduction means, produces plasma by feeding high-frequency energy to the introduced processing gas, and uses the produced plasma to perform plasma processing on a workpiece stored in the processing chamber, comprising the step of:

sampling light of a pre-set wavelength from light emitted by the plasma produced in the vacuum processing chamber, acquiring as time-sequential data the luminous intensity of the sampled light of the specific wavelength, and computing a regression line on the basis of the acquired time-sequential data, wherein;

an endpoint of etching processing is determined based on the product of the maximum value of an area, which is surrounded by the regression line and the time-sequential data which are obtained at the step, by the difference between an area formed above the regression line and an area formed below the regression line.